论文信息 - Improved very-high-speed packaged InGaAs PIN punch-through photodiode

Improved very-high-speed packaged InGaAs PIN punch-through photodiode

We describe the fabrication and characterisation of an improved, coaxially packaged, back-illuminated mesa PIN photodetector utilising an InGaAs absorbing layer on an InP substrate. The measured 3 dB bandwidth is 22 GHz.

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