Semiconductor devices for RF applications: evolution and current status
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[1] R.N. Nottenburg,et al. Microwave noise performance of InP/InGaAs heterostructure bipolar transistors , 1989, IEEE Electron Device Letters.
[2] R. Scherer,et al. Very high-power-density CW operation of GaAs/AlGaAs microwave heterojunction bipolar transistors , 1993, IEEE Electron Device Letters.
[3] Paolo Lugli,et al. Pseudomorphic HEMT technology and applications , 1996 .
[4] H. F. Cooke,et al. Microwave transistors: Theory and design , 1971 .
[5] P. Tasker,et al. Characterization of ultra-high-speed pseudomorphic AlGaAs/InGaAs (on GaAs) MODFETs , 1989 .
[6] W. Hooper,et al. An epitaxial GaAs field-effect transistor , 1967 .
[7] Chenming Hu. Silicon nanoelectronics for the 21st century , 1999 .
[8] A. Wood,et al. 120 Watt, 2 GHz, Si LDMOS RF power transistor for PCS base station applications , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
[9] Juin J. Liou. Principles and Analysis of AlGaAs/GaAs Heterojunction Bipolar Transistors , 1996 .
[10] R. Lai,et al. A high power and high efficiency monolithic power amplifier for local multipoint distribution service , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
[11] E. Morifuji,et al. High-frequency AC characteristics of 1.5 nm gate oxide MOSFETs , 1996, International Electron Devices Meeting. Technical Digest.
[12] Fritz J. Kub,et al. A 230 watt S-band SiGe HBT , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.
[13] Y. Taur,et al. High-performance 0.07-μm CMOS with 9.5-ps gate delay and 150 GHz f/sub T/ , 1997, IEEE Electron Device Letters.
[14] S. Murakami,et al. High-power, high-efficiency cell design for 26 GHz HBT power amplifier , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.
[15] U. Konig,et al. SiGe and GaAs as competitive technologies for RF-applications , 1998, Proceedings of the 1998 Bipolar/BiCMOS Circuits and Technology Meeting (Cat. No.98CH36198).
[16] J. Zolper,et al. Wide bandgap semiconductor microwave technologies: from promise to practice , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[17] M. Tokumitsu,et al. V-band monolithic low-noise amplifiers using ion-implanted n/sup +/-self-aligned GaAs MESFETs , 1999, IEEE Microwave and Guided Wave Letters.
[18] H. Macksey,et al. GaAs FETs having high output power per unit gate width , 1981, IEEE Electron Device Letters.
[19] T. Nakamura,et al. InGaP/GaAs HBT's with high-speed and low-current operation fabricated using WSi/Ti as the base electrode and burying SiO/sub 2/ in the extrinsic collector , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[20] J. Palmour,et al. Silicon carbide MESFET's with 2 W/mm and 50% P.A.E. at 1.8 GHz , 1996, 1996 IEEE MTT-S International Microwave Symposium Digest.
[21] P. Liu,et al. 94-GHz 0.1- mu m T-gate low-noise pseudomorphic InGaAs HEMTs , 1990, IEEE Electron Device Letters.
[22] P. Crozat,et al. Noise parameters of InP-based double heterojunction base-collector self-aligned bipolar transistors , 1999, IEEE Microwave and Guided Wave Letters.
[23] M.R.S. Taylor,et al. Metamorphic GaAs HEMTs with f/sub T/ of 200 GHz , 1999 .
[24] Hiroshi Iwai,et al. CMOS technology-year 2010 and beyond , 1999, IEEE J. Solid State Circuits.
[25] James C. Ellenbogen,et al. Overview of nanoelectronic devices , 1997, Proc. IEEE.
[26] Y. Amamiya,et al. Microwave low-noise GaAs HBTs , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
[27] Lorene Samoska,et al. High-gain 150-215-GHz MMIC amplifier with integral waveguide transitions , 1999 .
[28] Gabriel M. Rebeiz,et al. 155- and 213-GHz AlInAs/GaInAs/InP HEMT MMIC oscillators , 1995 .
[29] S. Tiwari. Compound semiconductor device physics , 1992 .
[30] Kenji Kurishima,et al. Ultra-high f/sub max/ and f/sub T/ InP/InGaAs double-heterojunction bipolar transistors with step-graded InGaAsP collector , 1994, Proceedings of 1994 IEEE GaAs IC Symposium.
[31] W. Walter,et al. High-speed gallium-arsenide Schottky-barrier field-effect transistors , 1970 .
[32] Carver A. Mead,et al. Schottky barrier gate field effect transistor , 1966 .
[33] J. Sune,et al. Post-breakdown conduction in sub-5 nm gate oxides in MOS devices , 2000, Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474).
[34] Hermann Schumacher,et al. Enhanced SiGe heterojunction bipolar transistors with 160 GHz-f/sub max/ , 1995, Proceedings of International Electron Devices Meeting.
[35] P. Janke,et al. GaN/AlGaN high electron mobility transistors with f τ of 110 GHz , 2000 .
[36] Frank Schwierz,et al. Design of SiGe HBTs for High Frequency Operation , 1999 .
[37] P. Smith,et al. Extremely high gain 0.15 mu m gate-length InAlAs/InGaAs/InP HEMTs , 1991 .
[38] William Liu. Handbook of III-V Heterojunction Bipolar Transistors , 1998 .
[39] C. Dragon,et al. 120 Watt, 2GHz, Si LDMOS RF POWER TRANSISTOR FOR PCS BASE , 1998 .
[40] M. Wurzer,et al. 12 ps implanted base silicon bipolar technology , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[41] Isamu Hanyu,et al. Super low-noise HEMTs with a T-shaped WSix gate , 1988 .
[42] I. Eisele,et al. Influence of gate oxide breakdown on MOSFET device operation , 2000 .
[43] K. Ebihara,et al. L-band 100-watts push-pull GaAs power FET , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).
[44] D. Mensa,et al. A>400 GHz f/sub max/ transferred-substrate heterojunction bipolar transistor IC technology , 1998, IEEE Electron Device Letters.
[45] Takyiu Liu,et al. A high-performance AlInAs/InGaAs/InP DHBT K-band power cell , 1997, IEEE Microwave and Guided Wave Letters.
[46] K. Doverspike,et al. High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates , 1999, IEEE Electron Device Letters.
[47] K. Washio,et al. 100-GHz f/sub T/ Si homojunction bipolar technology , 1996, 1996 Symposium on VLSI Technology. Digest of Technical Papers.
[48] J. Cressler,et al. Si/SiGe epitaxial-base transistors. I. Materials, physics, and circuits , 1995 .
[49] Herbert Kroemer,et al. Theory of a Wide-Gap Emitter for Transistors , 1957, Proceedings of the IRE.
[50] R. Dingle,et al. Electron mobilities in modulation‐doped semiconductor heterojunction superlattices , 1978 .
[51] Yuan Taur,et al. High-Performance 0.07- m CMOS with 9.5-ps Gate Delay and 150 GHz , 1997 .
[52] H. D. Shih,et al. GaAs Bipolar Digital Integrated Circuits , 1985 .
[53] J. Rollett. Stability and Power-Gain Invariants of Linear Twoports , 1962 .
[54] D. Becher,et al. Direct ion-implanted 0.12 μm GaAs MESFET with f/sub t/ of 121 GHz and f/sub max/ of 160 GHz , 1999, IEEE Electron Device Letters.
[55] T. Mimura,et al. A New Field-Effect Transistor with Selectively Doped GaAs/n-AlxGa1-xAs Heterojunctions , 1980 .
[56] W. Kopp,et al. Characterization of InGaAs/AlGaAs pseudomorphic modulation-doped field-effect transistors , 1986, IEEE Transactions on Electron Devices.
[57] D. Mensa,et al. Submicron transferred-substrate heterojunction bipolar transistors , 1999, IEEE Electron Device Letters.
[58] G.A. Brown,et al. Sub-100 nm gate length metal gate NMOS transistors fabricated by a replacement gate process , 1997, International Electron Devices Meeting. IEDM Technical Digest.
[59] M. Tomizawa,et al. Effects of neutral buried p-layer on high-frequency performance of GaAs MESFETs , 1991 .
[60] H. Fukui. Optimal noise figure of microwave GaAs MESFET's , 1979, IEEE Transactions on Electron Devices.
[61] Hyunsang Hwang,et al. Hot carrier degradation for narrow width MOSFET with shallow trench isolation , 2000 .
[62] J. R. Arthur,et al. Molecular beam epitaxy , 1975 .
[63] Y. Umeda,et al. 30-nm-gate InAlAs/InGaAs HEMTs lattice-matched to InP substrates , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[64] S. C. Wang,et al. W-band high efficiency InP-based power HEMT with 600 GHz f/sub max/ , 1995 .
[65] P. Chao,et al. Gate Formation Technologies , 1996 .
[66] Klaus Köhler,et al. Effect of drain voltage on channel temperature and reliability of pseudomorphic InP-based HEMTs , 2000 .
[67] Bumman Kim,et al. Millimeter-wave power transistors and circuits , 1989 .
[68] James D. Meindl. Gigascale integration: is the sky the limit? , 1996 .
[69] Kaoru Inoue,et al. High-quality InxGa1−xAs/InAlAs modulation-doped heterostructures grown lattice-mismatched on GaAs substrates , 1991 .
[70] M. Mastrapasqua,et al. Very low cost graded SiGe base bipolar transistors for a high performance modular BiCMOS process , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[71] Juin J. Liou,et al. Long-term base current instability in AlGaAs/GaAs HBTs: physical mechanisms, modeling, and SPICE simulation , 1998 .
[72] F. Schwierz,et al. Microwave transistors-the last 20 years , 2000, Proceedings of the 2000 Third IEEE International Caracas Conference on Devices, Circuits and Systems (Cat. No.00TH8474).
[73] Norman G. Einspruch,et al. Vlsi Electronics: Microstructure Science , 1982 .
[74] Juin J. Liou,et al. MODELING THE POST-BURN-IN ABNORMAL BASE CURRENT IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR TRANSISTORS , 1996 .
[75] F. A. Myers. ADVANCED GALLIUM ARSENIDE CIRCUITS , 1998 .
[76] S. P. Beaumont,et al. Metamorphic GaAs HEMTs with fT of 200 GHz , 1999 .
[77] W. E. Hoke,et al. Molecular beam epitaxial growth and device performance of metamorphic high electron mobility transistor structures fabricated on GaAs substrates , 1999 .
[78] A. B. Vollmer. GATE ARRAYS BREAK PERFORMANCE RECORDS WITH 75-GHZ SIGE PROCESS , 1999 .
[79] John W. Palmour,et al. Silicon Carbide MESFET's for High-Power S-Band Applications , 1997 .
[80] B. Tillack,et al. Modular integration of high-performance SiGe:C HBTs in a deep submicron, epi-free CMOS process , 1999, International Electron Devices Meeting 1999. Technical Digest (Cat. No.99CH36318).
[81] R. C. Tiberio,et al. 0.1 μm gate length MODFETs with unity current gain cutoff frequency above 110 GHz , 1988 .
[82] M. Tokumitsu,et al. A 0.1-/spl mu/m self-aligned-gate GaAs MESFET with multilayer interconnection structure for ultra-high-speed ICs , 1996, International Electron Devices Meeting. Technical Digest.
[83] Y. Crosnier,et al. 0.1 /spl mu/m high performance metamorphic In/sub 0.32/Al/sub 0.68/As/In/sub 0.33/Ga/sub 0.67/As HEMT on GaAs using inverse step InAlAs buffer , 1999 .
[84] J.M.C. Stork,et al. Silicon-germanium base heterojunction bipolar transistors by molecular beam epitaxy , 1988, IEEE Electron Device Letters.
[85] W. Durr,et al. SiGe heterojunction bipolar transistors—The noise perspective , 1997 .
[86] N.-L. L. Wang. TRANSISTOR TECHNOLOGIES FOR RFICS IN WIRELESS APPLICATIONS , 1998 .
[87] S. Mason. Power Gain in Feedback Amplifier , 1954 .
[88] P. Janke,et al. High performance microwave power GaN/AlGaN MODFETs grown by RF-assisted MBE , 2000 .