Ultra low power subthreshold MOS current mode logic circuits using a novel load device concept

This article presents a novel and robust approach for implementing ultra-low power MOS current mode logic (MCML) circuits. To operate at very low bias currents, a simple and compact high resistance load device has been introduced. Operating in subthreshold regime, the circuit can be used in a very wide frequency range by adjusting the bias current without any need for resizing the devices. Measurements in 0.18 mum CMOS technology show that the proposed MCML circuit can be operated reliably with bias currents as low as 1 nA offering a significant improvement of the power-delay product compared to conventional CMOS gates. Simulations show that the proposed circuit exhibits faster response compared to the conventional MCML circuits with triode-mode PMOS load devices at low bias currents.

[1]  Christian Enz,et al.  Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design , 2006 .

[2]  Kaushik Roy,et al.  Robust subthreshold logic for ultra-low power operation , 2001, IEEE Trans. Very Large Scale Integr. Syst..

[3]  Behzad Razavi Design of intergrated circuits for optical communications , 2002 .

[4]  Anantha P. Chandrakasan,et al.  Low-power CMOS digital design , 1992 .

[5]  E. Vittoz,et al.  Charge-Based MOS Transistor Modeling , 2006 .

[6]  Christofer Toumazou,et al.  Nano-power subthreshold current-mode logic in sub-100 nm technologies , 2005 .

[7]  M. Horowitz,et al.  Low-power digital design , 1994, Proceedings of 1994 IEEE Symposium on Low Power Electronics.

[8]  Jan M. Rabaey,et al.  MOS current mode logic for low power, low noise CORDIC computation in mixed-signal environments , 2000, ISLPED'00: Proceedings of the 2000 International Symposium on Low Power Electronics and Design (Cat. No.00TH8514).