论文信息 - Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

Charge collection efficiency in a semiconductor radiation detector with a non-constant electric field

The development of a model which enables the calculation of charge collection efficiencies in a planar semiconductor detector with a nonconstant electric field is described. The validity of the model is verified analytically by comparing the results predicted by it with known solutions for the limiting case of a constant field. The correctness of the model is also established by comparing its predictions with experimental results. The utility of this model is shown by computing an electric field distribution which would lead to improved energy resolution in a semiconductor detector. >

[1] F. J. Walter,et al. THE EFFECTS OF CARRIER TRAPPING IN SEMICONDUCTOR GAMMA-RAY SPECTROMETERS. , 1969 .

[2] Eiji Sakai,et al. Present status of room temperature semiconductor detectors , 1982 .

[3] D. Landis,et al. Signal Processing for Semiconductor Detectors , 1982, IEEE Transactions on Nuclear Science.

[4] C. Canali,et al. Gamma−ray spectroscopy with single−carrier collection in high−resistivity semiconductors , 1975 .

[5] R. Pehl,et al. Effect of charge carrier trapping on germanium coaxial detector line shapes , 1987 .

[6] R. Street,et al. Signal generation in a hydrogenerated amorphous silicon detector , 1989 .

[7] K. Hecht. Zum Mechanismus des lichtelektrischen Primärstromes in isolierenden Kristallen , 1932 .

[8] M. Martini,et al. The effect of charge trapping on the spectrometer performance of p-i-n semiconductor detectors , 1970 .

[9] F. Goulding,et al. Leakage current in semiconductor junction radiation detectors and its influence on energy-resolution characteristics , 1961 .

[10] V. Radeka,et al. Least-square-error amplitude measurement of pulse signals in presence of noise , 1967 .