Single Wafer Rapid Thermal Multiprocessing
暂无分享,去创建一个
Mehrdad M. Moslehi | Krishna C. Saraswat | S. C. Wood | David D. Grossman | K. Saraswat | M. Moslehi | S. Wood | P. Wright | Peter Wright | Len Booth | D. Grossman | L. Booth
[1] Rapid Thermal Oxidation and Nitridation of Silicon , 1986 .
[2] K. Saraswat,et al. Direct tungsten on silicon dioxide formed by RF plasma-enhanced chemical vapor deposition , 1988, IEEE Electron Device Letters.
[3] P. Carey,et al. A shallow junction submicrometer PMOS process without high temperature anneals , 1988, IEEE Electron Device Letters.
[4] James F. Gibbons,et al. Limited reaction processing: Silicon epitaxy , 1985 .
[5] P. Carey,et al. Ultra-shallow high-concentration boron profiles for CMOS processing , 1985, IEEE Electron Device Letters.
[6] J.D. Meindl,et al. Interfacial and breakdown characteristics of MOS devices with rapidly grown ultrathin SiO2gate insulators , 1987, IEEE Transactions on Electron Devices.
[7] K. Saraswat,et al. Formation of MOS Gates by rapid thermal/microwave remote-plasma multiprocessing , 1987, IEEE Electron Device Letters.
[8] J. Sturm,et al. Limited reaction processing: In-situ metal—oxide—semiconductor capacitors , 1986, IEEE Electron Device Letters.