Selective Synthesis of Bi2Te3/WS2 Heterostructures with Strong Interlayer Coupling.
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M. Terrones | H. Terrones | Zhiwen Liu | Y. Lei | A. Elías | Y. Yeh | Daniel Grasseschi | Fu Zhang | Michael C. Lucking | Tomotaroh Granzier-Nakajima | Ethan Kahn | K. Beach | W. Murray | D. Grasseschi
[1] M. Terrones,et al. Clean Transfer of 2D Transition Metal Dichalcogenides Using Cellulose Acetate for Atomic Resolution Characterizations , 2019, ACS Applied Nano Materials.
[2] S. Kar,et al. Probing the interlayer interaction between dissimilar 2D heterostructures by in situ rearrangement of their interface , 2019, 2D Materials.
[3] J. Robinson,et al. Oxygen-Induced In Situ Manipulation of the Interlayer Coupling and Exciton Recombination in Bi2Se3/MoS2 2D Heterostructures. , 2019, ACS applied materials & interfaces.
[4] A. Pasupathy,et al. Strain Engineering and Raman Spectroscopy of Monolayer Transition Metal Dichalcogenides , 2018, Chemistry of Materials.
[5] Yung‐Chang Lin,et al. Selective Growth of Two-Dimensional Heterostructures of Gallium Selenide on Monolayer Graphene and the Thickness Dependent p- and n-Type Nature , 2018 .
[6] Chuanghan Hsu,et al. A library of atomically thin metal chalcogenides , 2018, Nature.
[7] S. Fullerton‐Shirey,et al. Properties of synthetic epitaxial graphene/molybdenum disulfide lateral heterostructures , 2017 .
[8] J. Zhong,et al. Significant photoluminescence quenching and charge transfer in the MoS2/Bi2Te3 heterostructure , 2017, Journal of Physics and Chemistry of Solids.
[9] S. Banerjee,et al. Versatile Large-Area Custom-Feature van der Waals Epitaxy of Topological Insulators. , 2017, ACS nano.
[10] Guowei Yang,et al. All‐Layered 2D Optoelectronics: A High‐Performance UV–vis–NIR Broadband SnSe Photodetector with Bi2Te3 Topological Insulator Electrodes , 2017 .
[11] C. Lane,et al. Tunable and laser-reconfigurable 2D heterocrystals obtained by epitaxial stacking of crystallographically incommensurate Bi2Se3 and MoS2 atomic layers , 2017, Science Advances.
[12] Brian M. Bersch,et al. Selective-area growth and controlled substrate coupling of transition metal dichalcogenides , 2017 .
[13] Jinxiong Wu,et al. Chemically Engineered Substrates for Patternable Growth of Two-Dimensional Chalcogenide Crystals. , 2016, ACS nano.
[14] G. Duscher,et al. Interlayer Coupling in Twisted WSe2/WS2 Bilayer Heterostructures Revealed by Optical Spectroscopy. , 2016, ACS nano.
[15] M. Terrones,et al. Defect engineering of two-dimensional transition metal dichalcogenides , 2016 .
[16] T. Mallouk,et al. Distinct photoluminescence and Raman spectroscopy signatures for identifying highly crystalline WS_2 monolayers produced by different growth methods , 2016 .
[17] M. Dresselhaus,et al. Parallel Stitching of 2D Materials , 2015, Advanced materials.
[18] L. Chu,et al. Halide-Assisted Atmospheric Pressure Growth of Large WSe2 and WS2 Monolayer Crystals , 2015, 1509.00555.
[19] Pinshane Y. Huang,et al. High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity , 2015, Nature.
[20] Wei Jiang,et al. Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors , 2015, Nature Communications.
[21] Hiroki Hibino,et al. Growth and Optical Properties of High-Quality Monolayer WS2 on Graphite. , 2015, ACS nano.
[22] Bin Yu,et al. Defect-induced photoluminescence in monolayer semiconducting transition metal dichalcogenides. , 2015, ACS nano.
[23] Caiyun Chen,et al. Broadband photodetectors based on graphene-Bi2Te3 heterostructure. , 2015, ACS Nano.
[24] Moon J. Kim,et al. Atomically thin heterostructures based on single-layer tungsten diselenide and graphene. , 2014, Nano letters.
[25] J. Arbiol,et al. Te-seeded growth of few-quintuple layer Bi2Te3 nanoplates , 2014, Nano Research.
[26] Zhiwen Liu,et al. Extraordinary Second Harmonic Generation in Tungsten Disulfide Monolayers , 2014, Scientific Reports.
[27] S. Louie,et al. Evolution of interlayer coupling in twisted molybdenum disulfide bilayers , 2014, Nature Communications.
[28] Timothy C. Berkelbach,et al. Tailoring the electronic structure in bilayer molybdenum disulfide via interlayer twist. , 2014, Nano letters.
[29] S. Louie,et al. Probing excitonic dark states in single-layer tungsten disulphide , 2014, Nature.
[30] Andres Castellanos-Gomez,et al. The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2 , 2013, Nano Research.
[31] Zhongfan Liu,et al. Selective‐Area Van der Waals Epitaxy of Topological Insulator Grid Nanostructures for Broadband Transparent Flexible Electrodes , 2013, Advanced materials.
[32] J. Grossman,et al. Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged, and free excitons , 2013, Scientific Reports.
[33] SUPARNA DUTTASINHA,et al. Van der Waals heterostructures , 2013, Nature.
[34] C. C. Wang,et al. In situ Raman spectroscopy of topological insulator Bi2Te3 films with varying thickness , 2013, Nano Research.
[35] Jean-Christophe Charlier,et al. Identification of individual and few layers of WS2 using Raman Spectroscopy , 2013, Scientific Reports.
[36] K. Tsukagoshi,et al. Quantitative Raman spectrum and reliable thickness identification for atomic layers on insulating substrates. , 2012, ACS nano.
[37] W. Dang,et al. Topological insulator nanostructures for near-infrared transparent flexible electrodes. , 2012, Nature chemistry.
[38] W. Dang,et al. Few-layer nanoplates of Bi 2 Se 3 and Bi 2 Te 3 with highly tunable chemical potential. , 2010, Nano letters.
[39] Z. K. Liu,et al. Experimental Realization of a Three-Dimensional Topological Insulator , 2010 .
[40] Stefano de Gironcoli,et al. QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials , 2009, Journal of physics. Condensed matter : an Institute of Physics journal.
[41] Xi Dai,et al. Topological insulators in Bi2Se3, Bi2Te3 and Sb2Te3 with a single Dirac cone on the surface , 2009 .
[42] H. Cui,et al. Optical constants of Bi2Te3 and Sb2Te3 measured using spectroscopic ellipsometry , 1999 .
[43] A. A. Studna,et al. Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1.5 to 6.0 eV , 1983 .
[44] R. F. Brebrick,et al. Partial and Total Vapor Pressures over Molten Bi2Te3 , 1971 .
[45] R. Grigorovici,et al. Optical Properties and Electronic Structure of Amorphous Germanium , 1966, 1966.