Recent advances in mid-infrared (3–6 μm) emitters

Abstract We describe the metal-organic chemical vapor deposition (MOCVD) of InAsSb/InAs multiple quantum well (MQW) and InAsSb/InAsP strained-layer superlattice (SLS) active regions for use in mid-infrared emitters. We have made gain-guided, injection lasers using undoped, p-type AlAs0.16Sb0.84 for optical confinement and both strained InAsSb/InAs MQW and InAsSb/InAsP SLS active regions. The lasers and light emitting diodes (LED) utilize the semi-metal properties of a p-GaAsSb/n-InAs heterojunction as a source for electrons injected into active regions. A multiple-stage LED utilizing this semi-metal injection scheme is reported. Gain-guided, injected lasers with a strained InAsSb/InAs MQW active region operated up to 210 K in pulsed mode with an emission wavelength of 3.8–3.9 μm and a characteristic temperature of 29–40 K. We also present results for both optically pumped and injection lasers with InAsSb/InAsP SLS active regions. The maximum operating temperature of an optically pumped 3.7 μm SLS laser was 240 K. An SLS LED emitted at 4.0 μm with 80 μW of power at 300 K.

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