Failure Rate Prediction and Accelerated Detection of Anomalous Charge Loss in Flash Memories by Using an Analytical Transient Physics-Based Charge Loss Model.

We introduce an analytical physics-based model for the transient simulation of anomalous charge loss in flash memories. This model is applied to determine the bit failure rate and the time-to-failure due to anomalous charge loss. This model can also be used to introduce an accelerated method for the detection of bits suffering from anomalous charge loss.