Charge transport and trapping phenomena in off‐stoichiometric silicon dioxide films

The electrical characteristics of off‐stoichiometric silicon dioxide films have been investigated. The off‐stoichiometric oxide films studied had an excess atomic silicon (Si) content in the range of 1%–6%. Raman spectroscopy and photoconductivity measurements indicate that the excess Si is present as amorphous Si islands or small crystallites embedded in silicon dioxide (SiO2) forming a two‐phase material. These films differ in structure from previously reported films where dual dielectric layers of stoichiometric SiO2 and Si‐rich SiO2 with ≥13% excess atomic Si were used. These dual dielectric films were observed to produce electron injection from contacting electrodes via the Si‐rich SiO2 layer into the SiO2 at lower average electric fields. This injection mechanism was believed to be due to localized electric field enhancement near the SiO2–Si‐rich SiO2 interface caused by the curvature of the tiny Si islands in the SiO2 matrix. The current versus voltage characteristics of the off‐stoichiometric oxid...

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