A W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier MMIC with 2.5dB noise figure and 19.4 dB gain at 94GHz

A three-stage W-band InGaAs/InAlAs/InP HEMT Low-Noise Amplifier (LNA) has been fabricated with 0.1mum EBL gate and improved Ohmic contact. A noise figure of 2.5 dB with an associated gain of 19.4 dB is demonstrated at 94 GHz. To our knowledge, it is the best noise/gain performance in a W-band LNA ever reported. A noise figure of 2.7 dB and an associated gain of 14.6 dB is also demonstrated with a dc power of 3.6 mW, making it a viable alternative to the ABCS technology for low dc power LNA applications.

[1]  W. Kong,et al.  Very high gain millimeter-wave InAlAs/InGaAs/GaAs metamorphic HEMT's , 1999, IEEE Electron Device Letters.

[2]  R. Lai,et al.  High Performance and High Reliability of 0.1 /spl mu/m InP HEMT MMIC Technology on 100 mm InP Substrates , 2007, 2007 IEEE 19th International Conference on Indium Phosphide & Related Materials.

[3]  K. L. Tan,et al.  Ultra low noise high gain W-band InP-based HEMT downconverter , 1991, 1991 IEEE MTT-S International Microwave Symposium Digest.

[4]  J. B. Boos,et al.  A W-band InAs/AlSb low-noise/low-power amplifier , 2005, IEEE Microwave and Wireless Components Letters.

[5]  M. Barsky,et al.  High performance millimeter wave 0.1 /spl mu/m InP HEMT MMIC LNAs fabricated on 100 mm wafers , 2004, 16th IPRM. 2004 International Conference on Indium Phosphide and Related Materials, 2004..