Nanoscale phenomena ruling deposition and intercalation of AlN at the graphene/SiC interface.

The possibility for kinetic stabilization of prospective 2D AlN was explored by rationalizing metal organic chemical vapor deposition (MOCVD) processes of AlN on epitaxial graphene. From the wide range of temperatures which can be covered in the same MOCVD reactor, the deposition was performed at the selected temperatures of 700, 900, and 1240 °C. The characterization of the structures by atomic force microscopy, electron microscopy and Raman spectroscopy revealed a broad range of surface nucleation and intercalation phenomena. These phenomena included the abundant formation of nucleation sites on graphene, the fragmentation of the graphene layers which accelerated with the deposition temperature, the delivery of excess precursor-derived carbon adatoms to the surface, as well as intercalation of sub-layers of aluminum atoms at the graphene/SiC interface. The conceptual understanding of these nanoscale phenomena was supported by our previous comprehensive ab initio molecular dynamics (AIMD) simulations of the surface reaction of trimethylaluminum, (CH3)3Al, precursor with graphene. A case of applying trimethylindium, (CH3)3In, precursor to epitaxial graphene was considered in a comparative way.

[1]  R. Yakimova,et al.  Raman probing of hydrogen-intercalated graphene on Si-face 4H-SiC , 2019, Materials Science in Semiconductor Processing.

[2]  R. Yakimova,et al.  Probing the uniformity of hydrogen intercalation in quasi-free-standing epitaxial graphene on SiC by micro-Raman mapping and conductive atomic force microscopy , 2019, Nanotechnology.

[3]  Wenliang Wang,et al.  2D AlN Layers Sandwiched Between Graphene and Si Substrates , 2018, Advanced materials.

[4]  D. Sangiovanni,et al.  Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene. , 2018, Physical chemistry chemical physics : PCCP.

[5]  E. Aktürk,et al.  Fundamentals, progress, and future directions of nitride-based semiconductors and their composites in two-dimensional limit: A first-principles perspective to recent synthesis , 2018 .

[6]  F. Speck,et al.  Growth and Intercalation of Graphene on Silicon Carbide Studied by Low‐Energy Electron Microscopy , 2017 .

[7]  S. Datta,et al.  Two-dimensional gallium nitride realized via graphene encapsulation. , 2016, Nature materials.

[8]  F. Mota,et al.  Van der Waals stacks of few-layer h-AlN with graphene: an ab initio study of structural, interaction and electronic properties , 2016, Nanotechnology.

[9]  T. Malin,et al.  Graphene-like AlN layer formation on (111)Si surface by ammonia molecular beam epitaxy , 2015 .

[10]  N. T. Son,et al.  Exciton luminescence in AlN triggered by hydrogen and thermal annealing , 2015 .

[11]  C. He,et al.  Tuning the electronic and magnetic properties of graphene-like AlN nanosheets by surface functionalization and thickness. , 2015, Physical chemistry chemical physics : PCCP.

[12]  Yu‐Chuan Lin,et al.  The impact of graphene properties on GaN and AlN nucleation , 2015 .

[13]  F. Peeters,et al.  Hexagonal AlN: Dimensional-crossover-driven band-gap transition , 2015, 1502.05809.

[14]  S. A. Giamini,et al.  Evidence for graphite-like hexagonal AlN nanosheets epitaxially grown on single crystal Ag(111) , 2013 .

[15]  D. Basko,et al.  Raman spectroscopy as a versatile tool for studying the properties of graphene. , 2013, Nature nanotechnology.

[16]  A. Kakanakova-Georgieva,et al.  Defects in hexagonal-AlN sheets by first-principles calculations , 2012 .

[17]  Mikael Syväjärvi,et al.  Analysis of the Formation Conditions for Large Area Epitaxial Graphene on SiC Substrates , 2010 .

[18]  C. Coletti,et al.  Quasi-free-standing epitaxial graphene on SiC obtained by hydrogen intercalation. , 2009, Physical review letters.

[19]  Hasan Sahin,et al.  Monolayer honeycomb structures of group-IV elements and III-V binary compounds: First-principles calculations , 2009, 0907.4350.

[20]  Neil L Allan,et al.  Graphitic nanofilms as precursors to wurtzite films: theory. , 2006, Physical review letters.

[21]  A. Koma.  Van der Waals epitaxy for highly lattice-mismatched systems , 1999 .