Design, Synthesis, and Optoelectronic Properties of the High-Purity Phase in Layered AETMN2 (AE = Sr, Ba; TM = Ti, Zr, Hf) Semiconductors.
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T. Kamiya | H. Kumigashira | M. Minohara | Xinyi He | H. Hiramatsu | T. Katase | K. Ide | Hideo Hosono | K. Matsuzaki | N. Watanabe | A. Shiraishi | Shigeru Kimura