Low threshold photopumped AlxGa1−xAs quantum‐well heterostructure lasers
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N. Holonyak | D. Scifres | W. Streifer | R. Burnham | K. Hess | M. Camras
[1] N. Holonyak,et al. Low-threshold single quantum well (60 Å) GaAlAs lasers grown by MO-CVD with Mg as p-type dopant , 1982 .
[2] Karl Hess,et al. The dynamics of electron‐hole collection in quantum well heterostructures , 1982 .
[3] D. Scifres,et al. Low threshold, high efficiency Ga1−xAlxAs single quantum well visible diode lasers grown by metalorganic chemical vapor deposition , 1982 .
[4] M. Ludowise,et al. OM-VPE growth of Mg-doped GaAs , 1982 .
[5] Russell D. Dupuis,et al. Quantum-well heterostructure lasers , 1980 .
[6] N. Holonyak,et al. Carrier collection in a semiconductor quantum well , 1978 .
[7] W. Dumke,et al. The angular beam divergence in double-heterojunction lasers with very thin active regions , 1975 .
[8] R. Logan,et al. Optical waveguides in GaAs–AlGaAs epitaxial layers , 1973 .
[9] N. Holonyak,et al. Induced disorder of AlAs-AlGaAs-GaAs quantum-well heterostructures , 1982 .
[10] H. Casey,et al. Heterostructure lasers. Part A. Fundamental principles , 1978 .