Overview of gate linewidth control in the manufacture of CMOS logic chips

[1]  Sheila Vaidya,et al.  Optimizing numerical aperture and partial coherence to reduce proximity effect in deep-UV lithography , 1994, Advanced Lithography.

[2]  C. W. Jurgensen,et al.  Microscopic uniformity in plasma etching , 1992 .

[3]  Jean Lajzerowicz,et al.  Polysilicon etching for nanometer-scale features , 1991, Other Conferences.

[4]  Gottlieb S. Oehrlein,et al.  Reactive ion etching of silicon using bromine containing plasmas , 1990 .

[5]  E. Bassous,et al.  A three-layer resist system for deep U.V. and RIE microlithography on nonplanar surfaces , 1983 .

[6]  Lars W. Liebmann,et al.  Optical proximity correction: a first look at manufacturability , 1994, Photomask Technology.

[7]  Timothy Joseph Dalton Pattern Dependencies in the Plasma Etching of Polysilicon. , 1994 .

[8]  H. Hübner Calculations on Deposition and Redeposition in Plasma Etch Processes , 1992 .

[9]  L. Tsou Highly Selective Reactive Ion Etching of Polysilicon with Hydrogen Bromide. , 1990 .

[10]  H. Kumar Wickramasinghe,et al.  Method for imaging sidewalls by atomic force microscopy , 1994 .

[11]  Chris A. Mack,et al.  Fundamental differences between positive- and negative-tone imaging , 1992, Advanced Lithography.

[12]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[13]  Timothy A. Brunner,et al.  Reduction of linewidth variation over reflective topography , 1992, Advanced Lithography.

[14]  Karey L. Holland,et al.  Deep-ultraviolet lithography for 500-nm devices , 1990, Advanced Lithography.

[15]  C. J. Mogab,et al.  The Loading Effect in Plasma Etching , 1977 .

[16]  Robert G. Meyer,et al.  Analysis and Design of Analog Integrated Circuits , 1993 .

[17]  Robert M. Wallace,et al.  Controlling polymer formation during polysilicon etching in a magnetically enhanced reactive ion etcher , 1993, Other Conferences.

[18]  W. Arden,et al.  An improved trilevel resist system for submicron optical lithography , 1985 .

[19]  Toshiro Tsumori,et al.  SiOxNy:H, high-performance antireflective layer for current and future optical lithography , 1994, Advanced Lithography.

[20]  Barbara Haselden,et al.  Profile Control And Stringer Removal During Plasma Etch Of Submicrometer Polysilicon Lines , 1990, Other Conferences.

[21]  Linda Milor Impact of CD control on circuit yield in submicron lithography , 1992, Advanced Lithography.

[22]  Daniel A. Corliss,et al.  Comparison of I-line and deep-UV technologies for 0.35-um lithography , 1994, Advanced Lithography.