Cascade-able spin torque logic gates with input–output isolation
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[1] N. L. Schryer,et al. The motion of 180° domain walls in uniform dc magnetic fields , 1974 .
[2] Parkin,et al. Spin engineering: Direct determination of the Ruderman-Kittel-Kasuya-Yosida far-field range function in ruthenium. , 1991, Physical review. B, Condensed matter.
[3] Parkin,et al. Oscillatory magnetic exchange coupling through thin copper layers. , 1991, Physical review letters.
[4] Berger. Emission of spin waves by a magnetic multilayer traversed by a current. , 1996, Physical review. B, Condensed matter.
[5] J. Slonczewski. Current-driven excitation of magnetic multilayers , 1996 .
[6] J. Bass,et al. Excitation of a magnetic multilayer by an electric current , 1998 .
[7] I. Sutherland,et al. Logical Effort: Designing Fast CMOS Circuits , 1999 .
[8] Ralph,et al. Current-induced switching of domains in magnetic multilayer devices , 1999, Science.
[9] P. L. Doussal,et al. Creep and depinning in disordered media , 2000, cond-mat/0002299.
[10] G. Laricchia,et al. On the normalization of the positron-impact direct ionization cross-section in the noble gases , 2002 .
[11] Edmond Cambril,et al. Domain wall pinning and controlled magnetic switching in narrow ferromagnetic ring structures with notches (invited) , 2003 .
[12] Jacques Miltat,et al. Faster magnetic walls in rough wires , 2003, Nature materials.
[13] James A. Hutchby,et al. Limits to binary logic switch scaling - a gedanken model , 2003, Proc. IEEE.
[14] Y. Aoyagi,et al. Spin-current-assisted domain-wall depinning in a submicron magnetic wire , 2003 .
[15] S. Sarma,et al. Spintronics: Fundamentals and applications , 2004, cond-mat/0405528.
[16] M. Hosomi,et al. A novel nonvolatile memory with spin torque transfer magnetization switching: spin-ram , 2005, IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest..
[17] D. Nikonov,et al. Research directions in beyond CMOS computing , 2007 .
[18] B. Diény,et al. Creep and flow regimes of magnetic domain-wall motion in ultrathin Pt/Co/Pt films with perpendicular anisotropy. , 2007, Physical review letters.
[19] J. Miltat,et al. Spin-torque driven magnetization dynamics : Micromagnetic modeling , 2008 .
[20] S. Yuasa,et al. Quantitative measurement of voltage dependence of spin-transfer torque in MgO-based magnetic tunnel junctions , 2008 .
[21] D. Nikonov,et al. Operation and Modeling of Semiconductor Spintronics Computing Devices , 2008 .
[22] D. Ralph,et al. Spin transfer torques , 2007, 0711.4608.
[23] S. Datta,et al. Proposal for an all-spin logic device with built-in memory. , 2010, Nature nanotechnology.
[24] Dmitri E. Nikonov,et al. (Keynote) Progress, Opportunities and Challenges for Beyond CMOS Information Processing Technologies , 2011 .
[25] T. Ghani,et al. Proposal of a Spin Torque Majority Gate Logic , 2010, IEEE Electron Device Letters.
[26] D. Jeong,et al. Emerging memories: resistive switching mechanisms and current status , 2012, Reports on progress in physics. Physical Society.
[27] D. E. Nikonov,et al. Uniform methodology for benchmarking beyond-CMOS logic devices , 2012, 2012 International Electron Devices Meeting.
[28] Nanomagnetic Logic and Magnetization Switching Dynamics in Spin Torque Majority Gates , 2012, 1212.4547.
[29] C. Ross,et al. Low Energy Magnetic Domain Wall Logic in Short, Narrow, Ferromagnetic Wires , 2012, IEEE Magnetics Letters.
[30] Lawrence T. Pileggi,et al. mLogic: Ultra-low voltage non-volatile logic circuits using STT-MTJ devices , 2012, DAC Design Automation Conference 2012.
[31] Dmitri E. Nikonov,et al. Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking , 2013, Proceedings of the IEEE.
[32] Dmitri E. Nikonov,et al. Automotion of domain walls for spintronic interconnects , 2014 .
[33] Dmitri E. Nikonov,et al. Switching efficiency improvement in spin torque majority gates , 2014 .
[34] D. Nikonov,et al. Spin torque majority gate logic , 2015 .