Comparison of nitrogen incorporation in SiO2/SiC and SiO2/Si structures

The nitrogen content of SiO2/SiC (4H) structures annealed in NO and N2O has been measured using nuclear reaction analysis. Samples were annealed in 15N18O or 15N2O at 1000 °C at a static pressure of 10 mbar for either 1 or 4 h. Annealing in N2O incorporates ∼1013 cm−2 of N and annealing in NO incorporates ∼1014 cm−2, both of which are an order of magnitude lower than in SiO2/Si. In the NO anneal, N is predominantly incorporated near the SiO2/SiC interface with an atomic concentration of ∼0.5%. As in the nitridation of SiO2/Si, two features are observed in SiO2/SiC after the NO anneal: a surface exchange of O in the oxide with the gas phase and NO diffusion and reaction at the interface. The surface exchange reaction in SiO2/SiC is similar to SiO2/Si, but there is a large difference in the incorporation of N at the interface.

[1]  Masanobu Miyao,et al.  Incorporation of N into Si/SiO2 interfaces: Molecular orbital calculations to evaluate interface strain and heat of reaction , 1999 .

[2]  H. B. Harrison,et al.  SIMS analysis of nitrided oxides grown on 4H-SiC , 1999 .

[3]  Martin L. Green,et al.  Nitrous oxide gas phase chemistry during silicon oxynitride film growth , 1998 .

[4]  I. Baumvol,et al.  Incorporation of oxygen and nitrogen in ultrathin films of SiO2 annealed in NO , 1998 .

[5]  J. J. A. Cooper,et al.  Advances in SiC MOS Technology , 1997 .

[6]  V. Afanas’ev,et al.  SiO2 as an insulator for SiC devices , 1997 .

[7]  H. B. Harrison,et al.  Nitridation of silicon-dioxide films grown on 6H silicon carbide , 1997, IEEE Electron Device Letters.

[8]  H. B. Harrison,et al.  INTERFACIAL CHARACTERISTICS OF N2O AND NO NITRIDED SIO2 GROWN ON SIC BY RAPID THERMAL PROCESSING , 1997 .

[9]  Leonard C. Feldman,et al.  High resolution ion scattering study of silicon oxynitridation , 1996 .

[10]  Leonard C. Feldman,et al.  Initial growth studies of silicon oxynitrides in a N2O environment , 1996 .

[11]  John W. Palmour,et al.  Improved oxidation procedures for reduced SiO2/SiC defects , 1996 .

[12]  D. Wristers,et al.  Degradation of oxynitride gate dielectric reliability due to boron diffusion , 1996 .

[13]  C. Yeh,et al.  Activation energy for thermal decomposition of nitric oxide , 1996 .

[14]  Z. Lu,et al.  The effect of rapid thermal N2O nitridation on the oxide/Si(100) interface structure , 1995 .

[15]  Michael R. Melloch,et al.  Characterization and optimization of the SiO2/SiC metal-oxide semiconductor interface , 1995 .

[16]  I. Baumvol,et al.  Mechanisms of Thermal Nitridation of Silicon , 1995 .

[17]  D. Wristers,et al.  Effects of chemical composition on the electrical properties of NO‐nitrided SiO2 , 1995 .

[18]  Sergio A. Ajuria,et al.  Furnace formation of silicon oxynitride thin dielectrics in nitrous oxide (N2O): The role of nitric oxide (NO) , 1994 .

[19]  G. Amsel,et al.  SPACES: A PC implementation of the stochastic theory of energy loss for narrow-resonance depth profiling☆ , 1990 .