论文信息 - Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

Influence of Dopant Concentration on Dislocation Distributions in 150mm 4H SiC Wafers

Shifts in the spatial distribution of threading dislocations in 150 mm 4H SiC wafers were examined as a response to intentional changes in both the flow of the nitrogen source gas used to control resistivity during bulk crystal growth, and the growth rate. The density of threading edge and screw dislocations was found to be more evenly distributed in wafers produced under a high-growth rate, low-resistivity process. This result corresponded to a flattening of the resistivity distribution, and a ~34% reduction in on-and off-facet resistivity differential. The effect was attributed to regularized 4H island coalescence due to modulation of step terrace width.

[1] M. Dudley,et al. Characterization of Strain Due to Nitrogen Doping Concentration Variations in Heavy Doped 4H-SiC , 2018, Journal of Electronic Materials.

[2] M. Dudley,et al. Mapping of Lattice Strain in 4H-SiC Crystals by Synchrotron Double-Crystal X-ray Topography , 2018, Journal of Electronic Materials.

[3] J. Krupka,et al. Effect of Nitrogen Doping on the Growth of 4H Polytype on the 6H-SiC Seed by PVT Method , 2012 .

[4] M. Loboda,et al. Basal plane dislocation multiplication via the Hopping Frank-Read source mechanism in 4H-SiC , 2012 .

[5] K. Lew,et al. Effect of threading screw and edge dislocations on transport properties of 4H-SiC homoepitaxial layers , 2010 .

[6] T. Hoshino,et al. Propagation behavior of threading dislocations during physical vapor transport growth of silicon carbide (SiC) single crystals , 2006 .

[7] H. Bleichner,et al. High-Power SiC Diodes: Characteristics, Reliability and Relation to Material Defects , 2002 .

[8] Michael Dudley,et al. Breakdown degradation associated with elementary screw dislocations in 4H-SiC p+n junction rectifiers , 1998 .