论文信息 - Analysis of second level resonant tunneling diodes and transistors

Analysis of second level resonant tunneling diodes and transistors

Calculations of the current‐voltage characteristics in double‐barrier resonant tunneling diodes and transistors in which the tunneling occurs through the second or higher level in the well are presented. The alloy compositions outside of the barriers and in the well can be adjusted so that the lowest level in the well is truly confined. The resonant tunneling current is then found to be a sensitive function of the charge in the well. This suggests a new type of tunneling transistor in which the voltage on the base modulates the amount of charge in the first level, thus modulating the collector current. The base resistance can be made small by providing sufficient carriers in the well.

J. Schulman | M. Waldner

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