论文信息 - Picosecond time‐resolved plasma and temperature‐induced changes of reflectivity and transmission in silicon

Picosecond time‐resolved plasma and temperature‐induced changes of reflectivity and transmission in silicon

A pump‐and‐probe technique is used to perform picosecond time‐resolved measurements of reflectivity and transmission changes in silicon. The results provide direct evidence that lattice heating, melting, or boiling can occur on a picosecond time scale. Detailed analysis of the data provides information about the dynamics of the electron‐hole plasma prior to melting and the kinetics of ultrafast phase transitions and crystal regrowth.

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