Analysis of the thermal behavior of AlGaN/GaN HEMTs

The thermal behavior of state-of-the-art multifinger AlGaN/GaN HEMTs grown on SiC is thoroughly analyzed under steady-state and dynamic conditions. Accurate 3-D FEM simulations – based on a novel in-house tool devised to automatically build the device mesh – are performed using a commercial software to explore the influence of various layout and technological solutions on the temperature field. An in-house routine is employed to determine the Foster/Cauer networks suited to describe the dynamic heat propagation through the device structure. To conclude, various experimental techniques are employed to assess the thermal resistance and to allow the monitoring of the thermal impedance versus time of the transistors under test.

[1]  C. Gaquière,et al.  Development of Time-resolved UV Micro-Raman Spectroscopy to measure temperature in AlGaN/GaN HEMTs , 2010 .

[2]  Salvatore Russo.  Measurement and Simulation of Electrothermal Effects in Solid-State Devices for RF Applications , 2010 .

[3]  Inspec,et al.  Properties of silicon carbide , 1995 .

[4]  Valentin O. Turin,et al.  Performance degradation of GaN field-effect transistors due to thermal boundary resistance at GaN/substrate interface , 2004 .

[5]  E. N. Protonotarios,et al.  Theory of Nonuniform RC Lines, Part I: Analytic Properties and Realizability Conditions in the Frequency Domain , 1967 .

[6]  Alexander A. Balandin,et al.  Temperature dependence of thermal conductivity of AlxGa1−xN thin films measured by the differential 3ω technique , 2004 .

[7]  Gerhard K. M. Wachutka,et al.  Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory , 2009, Microelectron. J..

[8]  S. P. Marsh,et al.  Direct extraction technique to derive the junction temperature of HBT's under high self-heating bias conditions , 2000 .

[9]  C. Mion.  Investigation of the Thermal Properties of Gallium Nitride using the Three Omega Technique , 2006 .

[10]  L. Faraone,et al.  Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances , 2008, IEEE Transactions on Device and Materials Reliability.

[11]  J. Pankove,et al.  Thermal Conductivity of GaN, 25-360 K , 1977 .

[12]  Kuan-Po Lin,et al.  Investigation of temperature-dependent characteristics of an n/sup +/-InGaAs/n-GaAs composite doped channel HFET , 2001 .

[13]  M. Kuball,et al.  Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy , 2002, IEEE Electron Device Letters.

[14]  G. Ghione,et al.  On the Substrate Thermal Optimization in SiC-Based Backside-Mounted High-Power GaN FETs , 2007, IEEE Transactions on Electron Devices.

[15]  E. A. Burgemeister,et al.  Thermal conductivity and electrical properties of 6H silicon carbide , 1979 .

[16]  V. Székely,et al.  Fine structure of heat flow path in semiconductor devices: a measurement and identification method , 1988 .

[17]  V. Szekely,et al.  On the representation of infinite-length distributed RC one-ports , 1991 .

[18]  M. Shur,et al.  Self-heating in high-power AlGaN-GaN HFETs , 1998, IEEE Electron Device Letters.

[19]  Hangfeng Ji,et al.  Thermal Boundary Resistance Between GaN and Substrate in AlGaN/GaN Electronic Devices , 2007, IEEE Transactions on Electron Devices.

[20]  Lester F. Eastman,et al.  Effect of surface passivation of AlGaN/GaN heterostructure field-effect transistor , 2002 .

[21]  Ilesanmi Adesida,et al.  AlGaN/GaN HEMT‐based fully monolithic X‐band low noise amplifier , 2005 .

[22]  V. Szekely,et al.  Identification of RC networks by deconvolution: chances and limits , 1998 .

[23]  Umesh K. Mishra,et al.  The toughest transistor yet [GaN transistors] , 2002 .

[24]  F. N. Masana.  A straightforward analytical method for extraction of semiconductor device transient thermal parameters , 2007, Microelectron. Reliab..