Lateral design of InP/InGaAs DHBTs for 40 GBIT/s ICs

InP-based HBTs are now available exhibiting cut-off frequency well over 100 GHz even at 1 mA. In this paper, a 40 Gbit/s IC-oriented InP/InGaAs DHBT technology is presented with maximum Ft of 170 GHz and Fmax over 210 GHz with BV/sub ce0/>9 V, specific features of this technology have been developed to increase the design flexibility: high current gain and frequency performances are kept over a large range of collector currents (from 1 mA to 100 mA) and for various dimensions, this is achieved through size-specific lateral transistor design optimization, these features are required for high-performance 40 Gbit/s ICs designed for optical transmission systems, in which careful transistor optimization has to be performed according to its function in the circuit.

[1]  Mark J. W. Rodwell,et al.  Transferred-substrate heterojunction bipolar transistor integrated circuit technology , 1999, Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362).

[2]  M. Hafizi,et al.  New submicron HBT IC technology demonstrates ultra-fast, low-power integrated circuits , 1998 .

[3]  A. Konczykowska,et al.  40 Gbit/s optical communications: InP DHBT technology, circuits and system experiments , 1999, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 21st Annual. Technical Digest 1999 (Cat. No.99CH36369).

[4]  Noboru Ishihara,et al.  Over-10-Gb/s IC's for future lightwave communications , 1994 .