论文信息 - Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

Vertical–cavity stimulated emission from photopumped InGaN/GaN heterojunctions at room temperature

We report the observation of room temperature violet (415 nm) stimulated emission in the vertical cavity mode from photopumped GaN/In0.25Ga0.75N heterojunctions. The InGaN/GaN heterojunction was deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition and was of high enough optical quality to achieve room‐temperature stimulated emission. The observed emission intensity was found to be a nonlinear function of incident optical pump power density. At threshold we observe a clear line narrowing of the output optical signal from 20 to 1.5 nm full width at half‐maximum.

[1] R. M. Kolbas,et al. Growth of high optical and electrical quality GaN layers using low‐pressure metalorganic chemical vapor deposition , 1991 .

[2] Isamu Akasaki,et al. Room‐temperature violet stimulated emission from optically pumped AlGaN/GaInN double heterostructure , 1994 .

[3] M. Asif Khan,et al. Vertical‐cavity, room‐temperature stimulated emission from photopumped GaN films deposited over sapphire substrates using low‐pressure metalorganic chemical vapor deposition , 1991 .

[4] Takashi Mukai,et al. High‐power InGaN/GaN double‐heterostructure violet light emitting diodes , 1993 .

[5] Isamu Akasaki,et al. Stimulated Emission Near Ultraviolet at Room Temperature from a GaN Film Grown on Sapphire by MOVPE Using an AlN Buffer Layer , 1990 .