论文信息 - Noise and small-signal performance of three different monolithic InP-based 10 Gbit/s photoreceiver OEICs

Noise and small-signal performance of three different monolithic InP-based 10 Gbit/s photoreceiver OEICs

Three circuit concepts (high impedance, common gate, and transimpedance) for a 10 Gbit/s monolithic receiver OEIC consisting of an InGaAs-InP pin photodiode and InAlAs-InGaAs-InP HEMTs are compared in terms of noise and small-signal performance using on-wafer measurements. A total equivalent input noise current of 13.5 pA/ square root (Hz) within the bandwidth of the transimpedance circuit is the lowest value ever reported for a monolithic InP-based 10 Gbit/s receiver OEIC. >

[1] Y. Akatsu,et al. A 10 Gb/s high sensitivity, monolithically integrated p-i-n-HEMT optical receiver , 1993, IEEE Photonics Technology Letters.

[2] W. Kuebart,et al. De-embedding of on-wafer lightwave measurements performed on a monolithic 10 Gb/s InP receiver-oeic , 1993, 1993 23rd European Microwave Conference.