InGaAs avalanche photodiode with InP p-n junction
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A new InGaAs avalanche photodiode structure that has an InGaAs light absorption region and InP avalanche multiplying region is proposed. A dark-current density of 2.2 × 10-3 A/cm2 at 90% of breakdown voltage and a multiplication factor of 45 were obtained for the new structure diode fabricated from a liquid-phase epitaxially grown wafer.
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