Carrier compensation near tail region in aluminum- or boron-implanted 4H-SiC(0001)

Electrical behavior of implanted Al and B near implant-tail region in 4H–SiC (0001) after high-temperature annealing has been investigated. Depth profiles of Al and B acceptors determined by capacitance-voltage characteristics are compared with those of Al and B atoms measured by secondary-ion-mass spectrometry. For Al+ (aluminum-ion) implantation, slight in-diffusion of Al implants occurred in the initial stage of annealing at 1700°C. The profile of the Al-acceptor concentration in a “box-profile” region as well as an “implant-tail” region is in good agreement with that of the Al-atom concentration, indicating that nearly all of the implanted Al atoms, including the in-diffused Al atoms, work as Al acceptors. Several electrically deep centers were formed by Al+ implantation. For B+ (boron-ion) implantation, significant out- and in-diffusion of B implants occurred in the initial stage of annealing at 1700°C. A high density of B-related D centers exists near the tail region. In the tail region, the sum of ...

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