High performance 1180nm InGaAs QDs laser by molecular beam epitaxy

Continuous-wave and pulse lasing are achieved at 1.18µm for In<inf>0.75</inf>Ga<inf>0.25</inf>As quantum dots structure grown on GaAs substrate. The threshold current density of 700A/cm², slope efficiency of 0.279mW/mA, and maximum output power of 40mW are obtained.