论文信息 - Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices - 字舞流文

Growth of monolayer graphene on 8° off-axis 4H–SiC (000–1) substrates with application to quantum transport devices

P. Godignon | N. Mestres | N. Camara | J. Camassel | C. Conséjo | B. Jouault | W. Desrat | A. Caboni | B. Jabakhanji | E. Pausas