A Lateral AlGaN/GaN Schottky Barrier Diode with 0.36 V Turn-on Voltage and 10 kV Breakdown Voltage by Using Double Barrier Anode Structure
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Dunjun Chen | Youdou Zheng | Z. Xie | Jiandong Ye | X. Xiu | Yimeng Li | Peng Chen | T. Zhu | Yuyin Li | Jing Zhou | Rong Zhang | Ru Xu