论文信息 - Properties of transparent conductive ZnO: Al thin films prepared by magnetron sputtering

Properties of transparent conductive ZnO: Al thin films prepared by magnetron sputtering

Abstract Middle-frequency alternative magnetron sputtering was used to deposit transparent conductive ZAO (ZnO:Al) thin films with ZAO (98 wt%ZnO+2 wt%Al2O3) ceramic target on glass and Si wafers. The influences of the various deposition parameters on the structural, optical and electrical performances of ZAO films have been studied. The structural characteristics of the films were investigated by the X-ray diffractometer and atomic force microscope, while the visible transmittance, carrier concentration and Hall mobility were studied by UV–VIS and the Hall tester, respectively. The lowest resistivity obtained in the work was 4.6×10−4 Ω cm for the film with average transmittance of 90.0% within the visible wavelength range and sheet resistance of 32 Ω, which was deposited at 250 °C and 0.8 Pa.

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