1/f noise in poly-Si MOSFET and strong correlation with oxide traps and grain boundaries
暂无分享,去创建一个
T. Nishida | Y. Kamigaki | Toshiaki Yamanaka | M. Aoki | T. Yamanaka | Y. Kamigaki | M. Aoki | T. Hashimoto | T. Nishida | T. Hashimoto
[1] P. J. Scanlon,et al. Conductivity behavior in polycrystalline semiconductor thin film transistors , 1982 .
[2] T. Katoh,et al. Characteristics of MOSFETs on large-grain polysilicon films , 1988 .
[3] T. Masuhara,et al. Low 1/f noise design of Hi-CMOS devices , 1982, IEEE Transactions on Electron Devices.