Pulse characterization of trapping and thermal effects of microwave GaN power FETs

An experimental characterization of GaN FETs is given in this paper. A pulsed I-V/pulsed S-parameters measurement set-up is used to investigate the trapping and thermal behavior of GaN MESFETs. It is shown that electrical performances are strongly affected by surface and substrate traps and that those effects are closely linked to the temperature of the device. RF measurements up to a drain voltage of 100 V and a temperature of 320/spl deg/C are presented.

[1]  Kazushige Horio,et al.  Two-dimensional analysis of substrate-trap effects on turn-on characteristics in GaAs MESFETs , 1999 .

[2]  J. Teyssier,et al.  40-GHz/150-ns versatile pulsed measurement system for microwave transistor isothermal characterization , 1998 .

[3]  R. Quere,et al.  Measurement based nonlinear electrothermal modeling of GaAs FET with dynamical trapping effects , 1998, 1998 IEEE MTT-S International Microwave Symposium Digest (Cat. No.98CH36192).

[4]  R. Trew,et al.  Wide bandgap semiconductor electronic devices for high frequency applications , 1996, GaAs IC Symposium IEEE Gallium Arsenide Integrated Circuit Symposium. 18th Annual Technical Digest 1996.

[5]  Umesh K. Mishra,et al.  14-W GaN-based microwave power amplifiers , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).

[6]  D. Barataud,et al.  Characterization and modeling of nonlinear trapping effects in power SiC MESFETs , 2000, 2000 IEEE MTT-S International Microwave Symposium Digest (Cat. No.00CH37017).