Selective-area vapour–liquid–solid growth of InP nanowires

A comparison is made between the conventional non-selective vapour-liquid-solid growth of InP nanowires and a novel selective-area growth process where the Au-seeded InP nanowires grow exclusively in the openings of a SiO(2) mask on an InP substrate. This new process allows the precise positioning and diameter control of the nanowires required for future advanced device fabrication. The growth temperature range is found to be extended for the selective-area growth technique due to removal of the competition between material incorporation at the Au/nanowire interface and the substrate. A model describing the growth mechanism is presented which successfully accounts for the nanoparticle size-dependent and time-dependent growth rate. The dominant indium collection process is found to be the scattering of the group III source material from the SiO(2) mask and subsequent capture by the nanowire, a process that had previously been ignored for selective-area growth by chemical beam epitaxy.

[1]  Philip J. Poole,et al.  Self-assembled InAs quantum dots on InP nano-templates , 2002 .

[2]  O. Kayser.  Selective growth of InP/GaInAs in LP-MOVPE and MOMBE/CBE , 1991 .

[3]  Nathan S. Lewis,et al.  Growth of vertically aligned Si wire arrays over large areas (>1 cm^2) with Au and Cu catalysts , 2007 .

[4]  Takashi Fukui,et al.  Growth of highly uniform InAs nanowire arrays by selective-area MOVPE , 2007 .

[5]  Takashi Fukui,et al.  Fabrication of InP∕InAs∕InP core-multishell heterostructure nanowires by selective area metalorganic vapor phase epitaxy , 2006 .

[6]  L. Samuelson,et al.  Surface diffusion effects on growth of nanowires by chemical beam epitaxy , 2007 .

[7]  R. S. Wagner,et al.  VAPOR‐LIQUID‐SOLID MECHANISM OF SINGLE CRYSTAL GROWTH , 1964 .

[8]  V. Ustinov,et al.  Diffusion-induced growth of GaAs nanowhiskers during molecular beam epitaxy: Theory and experiment , 2005 .

[9]  Connie J. Chang-Hasnain,et al.  Gibbs-Thomson and diffusion-induced contributions to the growth rate of Si, InP, and GaAs nanowires , 2009 .

[10]  K. Dick,et al.  A New Understanding of Au‐Assisted Growth of III–V Semiconductor Nanowires , 2005 .

[11]  Yu Huang,et al.  Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices , 2001, Nature.

[12]  T. Fukui,et al.  Realization of conductive InAs nanotubes based on lattice-mismatched InP∕InAs core-shell nanowires , 2006 .

[13]  Takashi Fukui,et al.  Catalyst-free selective-area MOVPE of semiconductor nanowires on (111)B oriented substrates , 2004 .

[14]  Lars Samuelson,et al.  Solid-phase diffusion mechanism for GaAs nanowire growth , 2004, Microscopy and Microanalysis.

[15]  Lars Samuelson,et al.  Role of surface diffusion in chemical beam epitaxy of InAs nanowires , 2004 .

[16]  W. Seifert,et al.  Diameter-dependent growth rate of InAs nanowires , 2007 .

[17]  L. Samuelson,et al.  Mass transport model for semiconductor nanowire growth. , 2005, The journal of physical chemistry. B.

[18]  Takashi Fukui,et al.  Controlled growth of highly uniform, axial/radial direction-defined, individually addressable InP nanowire arrays , 2005 .

[19]  Lars Montelius,et al.  Nanowire Arrays Defined by Nanoimprint Lithography , 2004 .

[20]  Lars Samuelson,et al.  Gold Nanoparticles: Production, Reshaping, and Thermal Charging , 1999 .

[21]  B. Baur,et al.  Growth of high purity InP by metalorganic Mbe (Cbe) , 1990 .

[22]  Lars Samuelson,et al.  One-dimensional steeplechase for electrons realized , 2002 .

[23]  Shadi A Dayeh,et al.  III-V nanowire growth mechanism: V/III ratio and temperature effects. , 2007, Nano letters.

[24]  Philip J. Poole,et al.  Spatially controlled, nanoparticle-free growth of InP nanowires , 2003 .