Lattice-Mismatched Growth and Transport Properties of InAlAs/InGaAs Heterostructures on GaAs Substrates
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We report on the lattice-mismatched growth of In0.53Ga0.47As/In0.52Al0.48As modulation-doped heterostructures on GaAs substrates by molecular beam epitaxy. A buffer layer structure and its growth conditions were optimized. As a result, we obtained a sample with a mirrorlike surface which exhibits electron mobility of 10500 cm2/Vs and 48500 cm2/Vs at 300 K and 77 K, respectively. These values are comparable to those obtained in lattice-matched structures grown on InP substrates. To our knowledge, the room temperature mobility is the highest ever reported in a modulation-doped heterostructure grown on a GaAs substrate.
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