HVIGBT Physical Model Analysis During Transient

The insulated gate bipolar transistor (IGBT) physical models are studied in details. The difference between low-voltage IGBT (LVIGBT) and high-voltage IGBT (HVIGBT) is analyzed and the shortage of the LVIGBT model used for HVIGBT is discussed. The physical model considering the effect of carrier concentrate on excess carrier lifetime is established for HVIGBT. The HVIGBT transient model is presented with different excess carrier lifetime in the base. The new description of steady-state U-I characteristics is also obtained with numerical method. The test experiment was performed in a Buck converter using 6500 V HVIGBT with different bus voltage and load current. The accuracy of the transient model of HVIGBT is verified by experiment and simulation results. The verification of some key parameters to describe the external characteristics is also given in the paper.

[1]  Holger Goebel,et al.  A unified method for modeling semiconductor power devices , 1993 .

[2]  Y. Yue,et al.  High-level free-carrier injection in advance bipolar junction transistors , 1995, Proceedings of First International Caracas Conference on Devices, Circuits and Systems.

[3]  C. J. Goodman,et al.  New high power diode model with both forward and reverse recovery , 1994 .

[4]  Tang Yong,et al.  New methods for extracting field-stop IGBT model parameters by electrical measurements , 2009, 2009 IEEE International Symposium on Industrial Electronics.

[5]  T. Rogne,et al.  Models for simulation of diode (and IGBT) switchings which include the effect of the depletion layer , 1993, Conference Record of the 1993 IEEE Industry Applications Conference Twenty-Eighth IAS Annual Meeting.

[6]  Stephen J. Finney,et al.  A new analytical IGBT model with improved electrical characteristics , 1999 .

[7]  A. Caiafa,et al.  Characterization and modeling of high-voltage field-stop IGBTs , 2002, Conference Record of the 2002 IEEE Industry Applications Conference. 37th IAS Annual Meeting (Cat. No.02CH37344).

[8]  Allen R. Hefner,et al.  Modeling Buffer Layer IGBT's for Circuit Simulation | NIST , 1993 .

[9]  P.R. Palmer,et al.  Physical Modeling of Fast p-i-n Diodes With Carrier Lifetime Zoning, Part I: Device Model , 2008, IEEE Transactions on Power Electronics.

[10]  Xiaosong Kang,et al.  Two-step parameter extraction procedure with formal optimization for physics-based circuit simulator IGBT and p-i-n diode models , 2006, IEEE Transactions on Power Electronics.

[11]  Stephen J. Finney,et al.  A review of IGBT models , 2000 .

[12]  Hans-Peter Nee,et al.  On Dynamic Effects Influencing IGBT Losses in Soft-Switching Converters , 2011, IEEE Transactions on Power Electronics.

[13]  A.R. Hefner.  An investigation of the drive circuit requirements for the power insulated gate bipolar transistor (IGBT) , 1990, 21st Annual IEEE Conference on Power Electronics Specialists.

[14]  J. Yamashita,et al.  An experimental and numerical study on the forward biased SOA of IGBTs , 1996 .

[15]  Hans Jurgen Mattausch,et al.  Status and trends of power semiconductor device models for circuit simulation , 1998 .

[16]  A. Monti.  A fuzzy-based black-box approach to IGBT modelling , 1996, Proceedings of Third International Conference on Electronics, Circuits, and Systems.

[17]  Liqing Lu,et al.  Physics-Based Model of Planar-Gate IGBT Including MOS Side Two-Dimensional Effects , 2010, IEEE Transactions on Industry Applications.

[18]  L. Ran,et al.  Investigation Into IGBT dV/dt During Turn-Off and Its Temperature Dependence , 2011, IEEE Transactions on Power Electronics.

[19]  F.W. Fuchs,et al.  Optimization of the stray inductance in three-phase MOSFET power modules aided by means of PEEC simulation , 2009, 2009 13th European Conference on Power Electronics and Applications.

[20]  A. R. Hefner.  An improved understanding for the transient operation of the power insulated gate bipolar transistor (IGBT) , 1989, 20th Annual IEEE Power Electronics Specialists Conference.

[21]  Bantval J. Baliga,et al.  Modeling the [dV/dt] of the IGBT during inductive turn off , 1999 .

[22]  S.J. Finney,et al.  Numerical Optimization of an Active Voltage Controller for High-Power IGBT Converters , 2007, IEEE Transactions on Power Electronics.

[23]  D. M. Diebolt,et al.  An experimentally verified IGBT model implemented in the Saber circuit simulator , 1991, PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference.

[24]  C. Ma,et al.  A simple power diode model with forward and reverse recovery , 1991, PESC '91 Record 22nd Annual IEEE Power Electronics Specialists Conference.

[25]  A.R. Hefner,et al.  Analytical modeling of device-circuit interactions for the power insulated gate bipolar transistor (IGBT) , 1988, Conference Record of the 1988 IEEE Industry Applications Society Annual Meeting.