An efficient HBT/RTD oscillator for wireless applications
暂无分享,去创建一个
H.J. De Los Santos | D. Chow | H. De los Santos | H. Dunlap | D.H. Chow | K.K. Chui | H.L. Dunlap | K. Chui
[1] Asad A. Abidi,et al. Low-power radio-frequency ICs for portable communications , 1995, Proc. IEEE.
[2] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[3] Federico Capasso,et al. Physics of Quantum Electron Devices , 1990 .
[4] J.P.A. van der Wagt,et al. RTD/HFET low standby power SRAM gain cell , 1998, IEEE Electron Device Letters.
[5] Gary H. Bernstein,et al. 12 GHz clocked operation of ultralow power interband resonant tunneling diode pipelined logic gates , 1997, IEEE J. Solid State Circuits.
[6] U. Auer,et al. A novel 3-D integrated HFET/RTD frequency multiplier , 1996 .
[7] K. Maezawa,et al. InP-based high-performance monostable-bistable transition logic elements (MOBILEs) using integrated multiple-input resonant-tunneling devices , 1996, IEEE Electron Device Letters.
[8] G. H. Heilmeier. Personal communications: Quo vadis , 1992, 1992 IEEE International Solid-State Circuits Conference Digest of Technical Papers.
[9] Pinaki Mazumder,et al. Digital circuit applications of resonant tunneling devices , 1998, Proc. IEEE.
[10] Peter Glösekötter,et al. Resonant tunneling transistors for threshold logic circuit applications , 1999, Proceedings Ninth Great Lakes Symposium on VLSI.
[11] Frederick H. Raab,et al. Solid State Radio Engineering , 1980 .
[12] H. D. L. Santos. Introduction to Microelectromechanical(MEM)Microwave Systems , 1999 .
[13] D. A. Fraser,et al. The physics of semiconductor devices , 1986 .
[14] C. Pacha,et al. InP-based HFETs and RTDs for high speed digital circuitry , 1998, 1998 URSI International Symposium on Signals, Systems, and Electronics. Conference Proceedings (Cat. No.98EX167).
[16] T. Mizutani,et al. Current–voltage characteristics of GaAs/AlAs double‐barrier resonant tunneling diodes with a Si‐planar‐doped barrier , 1996 .