论文信息 - Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy

Self-Annihilation of Antiphase Boundary in GaAs on Si(100) Grown by Molecular Beam Epitaxy

It has been shown that single domain GaAs can be grown on Si(100) which consists of two domains. A mechanism for self-annihilation of the antiphase boundary in the process of GaAs growth has been proposed to explain the experimental result.

Mitsuo Kawabe | M. Kawabe | Toshio Ueda | T. Ueda

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