The XBnn high operating temperature (HOT) detector project at SCD is aimed at developing a HOT (~150K) mid-wave infrared (MWIR) detector array, based on InAsSb/AlSbAs barrier detector or "bariode" device elements. The essential principle of the XBnn bariode architecture is to suppress the Generation-Recombination contribution to the dark current by ensuring that the depletion region of the device is contained inside a large bandgap n-type barrier layer (BL) and excluded from the narrow bandgap n-type active layer (AL). The band profile of the XBnn device leads to effective blocking of electron transport across the BL while maintaining a free path for the holes, thus assuring a high internal quantum efficiency (QE). Our devices exhibit a very large minority carrier lifetime (~700 ns), leading to a very low dark current of <10-6 A cm-2 at 150K, which is essentially diffusion limited. We compare bariode devices with both a p-type GaSb contact layer (CL) and an n-type InAsSb CL (termed CpBnn and nBnn, respectively). Apart from a ~0.3V shift in the operating bias, the optical and electrical properties of both architectures are virtually identical, demonstrating the generic nature of the XBnn barrier detector family. We have fabricated FPAs from nBnn bariode arrays bonded both to a 320×256, 30 μm pitch Read-Out Integrated Circuit (ROIC) and a 640×512, 15 μm pitch ROIC. For lattice matched FPAs the cut-off wavelength at >50% of maximum response is ~ 4.1 μm. We show an image registered at 150K with a 640×512/15 μm Pelican FPA, using f/3.2 optics. The operability at 150K is >99.5% and the measured NETD, limited only by shot and Read-Out noise, is 20 mK for a 22 ms integration time. At this f/number, the detector has a background limited performance (BLIP) up to ~165K.