FIB‐induced damage in silicon

The damage created in silicon transmission electron microscope specimens prepared using a focused ion beam miller is assessed using cross‐sections of trenches milled under different beam conditions. Side‐wall damage consists of an amorphous layer formed by direct interaction with the energetic gallium ion beam; a small amount of implanted gallium is also detected. By contrast, bottom‐wall damage layers are more complex and contain both amorphous films and crystalline regions that are richer in implanted gallium. More complex milling sequences show that redeposition of milled material, enriched in gallium, can occur depending on the geometry of the mill employed. The thickness of the damage layers depends strongly on beam energy, but is independent of beam current. Monte Carlo modelling of the damage formed indicates that recoil silicon atoms contribute significantly to the damaged formed in the specimen.

[1]  J. Cairney,et al.  Transmission Electron Microscope Specimen Preparation of Metal Matrix Composites Using the Focused Ion Beam Miller , 1999, Microscopy and Microanalysis.

[2]  R. B. Irwin,et al.  Transmission electron microscope specimen preparation of Zn powders using the focused ion beam lift-out technique , 1998 .

[3]  L. A. Giannuzzia,et al.  A review of focused ion beam milling techniques for TEM specimen preparation , 1999 .

[4]  C. Bulle-lieuwma,et al.  Novel scheme for the preparation of transmission electron microscopy specimens with a focused ion beam , 1993 .

[5]  P. Munroe,et al.  The effect of the gold sputter-coated films in minimising damage in FIB-produced TEM specimens , 2003 .

[6]  Lucille A. Giannuzzi,et al.  Electron backscattering diffraction investigation of focused ion beam surfaces , 2002 .

[7]  T. Nishikawa,et al.  Low‐damage specimen preparation technique for transmission electron microscopy using iodine gas‐assisted focused ion beam milling , 1995 .

[8]  J. Cairney,et al.  Redeposition effects in transmission electron microscope specimens of FeAl-WC composites prepared using a focused ion beam. , 2003, Micron.

[9]  O. W. Holland,et al.  Rapid thermal annealing of ion‐implanted semiconductors , 1984 .

[10]  H. Ahmed,et al.  Fabrication of Planar and Cross-Sectional TEM Specimens Using a Focused Ion Beam , 1990 .

[11]  J. Walker.  Surface damage of semiconductor TEM samples prepared by focused ion beams , 1997 .

[12]  H. Engelmann,et al.  TEM Sample Preparation Using Focused Ion Beam - Capabilities And Limits , 2003, Microscopy Today.

[13]  R. Elliman,et al.  Amorphous to Crystalline Phase Transformations in High Dose Ion Implanted Silicon , 1989 .

[14]  D. J. Barber.  Radiation damage in ion-milled specimens: characteristics, effects and methods of damage limitation☆ , 1993 .

[15]  Lucille A. Giannuzzi,et al.  A review of focused ion beam milling techniques for TEM specimen preparation , 1999 .

[16]  P. Munroe,et al.  Investigation of the structure of damage layers in TEM samples prepared using a focused ion beam , 2001 .

[17]  J. McCaffrey,et al.  Surface damage formation during ion-beam thinning of samples for transmission electron microscopy. , 2001, Ultramicroscopy.

[18]  L. Giannuzzi,et al.  FIB Damage in Silicon: Amorphization or Redeposition? , 2002, Microscopy and Microanalysis.

[19]  M. Phaneuf,et al.  Applications of focused ion beam microscopy to materials science specimens , 1999 .

[20]  R. Hackenberg,et al.  A comparison of EDS microanalysis in FIB-prepared and electropolished TEM thin foils. , 2003, Ultramicroscopy.