Correlation of crystalline and structural properties of C60 thin films grown at various temperature with charge carrier mobility

Transistors fabricated from C60 films grown by hot wall epitaxy at higher substrate temperature, showed an order of magnitude increased charge carrier mobility up to 6cm2∕Vs. In this letter, the authors present an extensive study of morphology and crystallinity of the fullerene films using atomic force microscopy and grazing-incidence x-ray diffraction. A clear correlation of crystalline quality of the C60 film and charge carrier mobility was found. A higher substrate temperature leads to a single crystal-like faceted fullerene crystals. The high crystalline quality solely brings a drastic improvement in the charge carrier mobility. A gate voltage independent mobility is also observed in these devices which can be attributed to the highly conjugated nature of the C60 thin film.

[1]  Helmut Sitter,et al.  High performance n-channel organic field-effect transistors and ring oscillators based on C60 fullerene films , 2006 .

[2]  Niyazi Serdar Sariciftci,et al.  PROGRESS IN PLASTIC ELECTRONICS DEVICES , 2006 .

[3]  S. Bauer,et al.  High-mobility n-channel organic field-effect transistors based on epitaxially grown C60 films , 2005 .

[4]  S. Iannotta,et al.  Pentacene Thin Film Growth , 2004 .

[5]  Gilles Horowitz,et al.  Organic thin film transistors: From theory to real devices , 2004 .

[6]  T. Shimoda,et al.  Control of carrier density by self-assembled monolayers in organic field-effect transistors , 2004, Nature materials.

[7]  G. Scoles,et al.  Dynamic scaling, island size distribution, and morphology in the aggregation regime of submonolayer pentacene films. , 2003, Physical review letters.

[8]  Akihiko Fujiwara,et al.  Fabrication and characterization of C60 thin-film transistors with high field-effect mobility , 2003 .

[9]  Y. Ochiai,et al.  Passivation effects of alumina insulating layer on C60 thin-film field-effect transistors , 2002 .

[10]  Gilles Horowitz,et al.  Grain size dependent mobility in polycrystalline organic field-effect transistors , 2001 .

[11]  T. Klapwijk,et al.  Morphology identification of the thin film phases of vacuum evaporated pentacene on SIO2 substrates , 1999 .

[12]  M. Vissenberg,et al.  Theory of the field-effect mobility in amorphous organic transistors , 1998, cond-mat/9802133.

[13]  Howard E. Katz,et al.  Morphological origin of high mobility in pentacene thin-film transistors , 1996 .

[14]  Christos D. Dimitrakopoulos,et al.  Molecular beam deposited thin films of pentacene for organic field effect transistor applications , 1996 .

[15]  Robert C. Haddon,et al.  C60 thin film transistors , 1995 .

[16]  H. Sitter,et al.  Hot wall epitaxy of C60 thin films on mica , 1995 .

[17]  Kenneth W. Nebesny,et al.  Valence and core photoelectron spectroscopy of C60, buckminsterfullerene , 1991 .

[18]  M. Shur,et al.  New high field‐effect mobility regimes of amorphous silicon alloy thin‐film transistor operation , 1986 .