Chemical methods of thin film deposition: Chemical vapor deposition, atomic layer deposition, and related technologies

This article provides a brief overview of thin film growth utilizing the reactive processes of chemical vapor deposition (CVD) and atomic layer deposition (ALD). In CVD, thin films are deposited upon the chemical reaction of vapor phase precursors with a solid surface. ALD is a surface reaction-controlled variant of CVD in which the chemical precursors are introduced in a sequential, pulsed manner, resulting in the growth of a self-limited monolayer (or less) film for each pulse step. The aim of both methodologies is the controlled growth of thin films with desired and reproducible properties. Emphasis is given to the latest advancements and future directions, and the processes and precursors commonly used to achieve controlled deposition.

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