Yield and reliability analysis of digital standard cells with resistive defects

Abstract New kinds of faults in digital ICs caused by particles with a certain resistance value are presented. By using an enhanced version of a three dimensional contamination-defect-fault simulator the faulty circuit behaviour caused by these defects and appropriate test strategies have been investigated. Moreover the dependence of failure probability on the defect size has been simulated and used to obtain a reliability estimate of the analysed ICs.

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