Modeling MOS snapback and parasitic bipolar action for circuit-level ESD and high current simulations

A circuit-level simulator for ESD and EOS is presented. Equations for modeling the high current behavior of NMOS and PMOS transistors have been developed and implemented in SPICE. A simple and practical extraction methodology for obtaining the bipolar parameters is given, which uses the three terminal currents obtained from a single high current I-V curve. Simulation results are presented and compared to experimental data for single devices as well as a practical output circuit.

[1]  Mario Pinto-Guedes,et al.  A circuit simulation model for bipolar-induced breakdown in MOSFET , 1988, IEEE Trans. Comput. Aided Des. Integr. Circuits Syst..

[2]  Siegfried Selberherr,et al.  Analysis of Breakdown Phenomena in MOSFET's , 1982, IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems.

[3]  A. Amerasekera,et al.  Electrothermal behavior of deep submicron nMOS transistors under high current snapback (ESD/EOS) conditions , 1994, Proceedings of 1994 IEEE International Electron Devices Meeting.

[4]  S. L. Miller.  Ionization Rates for Holes and Electrons in Silicon , 1957 .

[5]  Sung-Mo Kang,et al.  Circuit-level simulation of CDM-ESD and EOS in submicron MOS devices , 1996, 1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium.

[6]  S.E. Laux,et al.  A study of channel avalanche breakdown in scaled n-MOSFET's , 1987, IEEE Transactions on Electron Devices.

[7]  R.W. Dutton,et al.  Bipolar transistor modeling of avalanche generation for computer circuit simulation , 1975, IEEE Transactions on Electron Devices.

[8]  J.R.M. Luchies,et al.  Fast turn-on of an NMOS ESD protection transistor: measurements and simulations , 1995 .

[9]  M. Reisch.  On bistable behavior and open-base breakdown of bipolar transistors in the avalanche regime-modeling and applications , 1992 .

[10]  J. Moll,et al.  Breakdown mechanism in short-channel MOS transistors , 1978, 1978 International Electron Devices Meeting.

[11]  J. Lindmayer,et al.  Theory of lateral transistors , 1967 .

[12]  Sung-Mo Kang,et al.  Circuit-Level Electrothermal Simulation , 1995 .

[13]  S. Asai,et al.  A numerical model of avalanche breakdown in MOSFET's , 1978, IEEE Transactions on Electron Devices.

[14]  E. Worley,et al.  Sub-micron chip ESD protection schemes which avoid avalanching junctions , 1995, Electrical Overstress/Electrostatic Discharge Symposium Proceedings.

[15]  G. Groeseneken,et al.  A compact model for the grounded-gate nMOS behaviour under CDM ESD stress , 1996, 1996 Proceedings Electrical Overstress/Electrostatic Discharge Symposium.

[16]  S. Simon Wong,et al.  High-gain lateral bipolar action in a MOSFET structure , 1991 .

[17]  A. Amerasekera,et al.  Characterization and modeling of second breakdown in NMOST's for the extraction of ESD-related process and design parameters , 1991 .

[18]  Kueing-Long Chen.  The effects of interconnect process and snapback voltage on the ESD failure threshold of NMOS transistors , 1988 .

[19]  S. M. Sze,et al.  Physics of semiconductor devices , 1969 .

[20]  B. Eitan,et al.  Surface conduction in short-channel MOS devices as a limitation to VLSI scaling , 1982, IEEE Transactions on Electron Devices.

[21]  R. Muller,et al.  VIA-4 avalanche-induced breakdown mechanisms in short-channel MOSFETs , 1982, IEEE Transactions on Electron Devices.

[22]  N. D. Jankovic.  Pre-turn-on source bipolar injection in graded NMOSTs , 1991 .

[23]  C. Duvvury,et al.  Dynamic gate coupling of NMOS for efficient output ESD protection , 1992, 30th Annual Proceedings Reliability Physics 1992.

[24]  Christian Russ,et al.  Compact electro‐thermal simulation of ESD‐protection elements , 1994 .

[25]  Chenming Hu,et al.  An analytical breakdown model for short-channel MOSFET's , 1982, IEEE Transactions on Electron Devices.

[26]  Theodore I. Kamins,et al.  Device Electronics for Integrated Circuits , 1977 .

[27]  A. G. Chynoweth,et al.  Uniform Silicon p‐n Junctions. II. Ionization Rates for Electrons , 1960 .