论文信息 - Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films - 字舞流文

Characterization and comparison of 4H-SiC(112 over-bar 0) and 4H-SiC(0001) 8° off-axis substrates and homoepitaxial films

A. Henry | R. Davis | C. Hallin | L. Storasta | W. Sarney | S. Bishop | Z. Reitmeier | H. Jacobson | E. Preble | B. Wagner | E. Janzén | Hsueh-Rong Chang