Intrinsic infrared detectors
暂无分享,去创建一个
[1] T. N. Duy,et al. CMT - The material for fiber optical communication devices , 1985 .
[2] P. Becla,et al. Isothermal Growth of HgCdTe under Controlled Hg Vapor Pressure , 1982 .
[3] M. W. Scott. Energy Gap in Hg1−xCdxTe by Optical Absorption , 1969 .
[4] D. Wight,et al. The use of alternative solvents for the low-temperature LPE growth of CdTe films , 1985 .
[5] H. Henisch. Rectifying Semiconductor Contacts , 1956 .
[6] D. Rhiger,et al. Composition of native oxides and etched surfaces on Hg1−xCdxTe , 1982 .
[7] H. Grubin. The physics of semiconductor devices , 1979, IEEE Journal of Quantum Electronics.
[8] D. R. Daniel,et al. Sublimation growth of pseudobinary Pb0.93Sn0.07Se crystals with controlled carrier concentration , 1977 .
[9] C. Fonstad,et al. Liquid phase epitaxial growth of laser heterostructures in Pb1−xSnxTe , 1974 .
[10] A. Million,et al. Molecular beam epitaxy of II–VI compounds: CdxHg1−xTe , 1981 .
[11] G. Montgomery,et al. Ingot‐nucleated Pb1−xSnxTe diode lasers , 1976 .
[12] D. R. Daniel,et al. Growth and morphology of Pb1−ySnySe and (PbSe)1−z(SnTe)z alloys from the vapor phase , 1974 .
[13] A. L. McWhorter,et al. PbS MIS devices for charge‐coupled infrared imaging applications , 1975 .
[14] S. C. Choo,et al. Recombination Centers in InSb , 1967 .
[15] M. Nowak,et al. Interference photoelectromagnetic effect in graded-gap semiconductors , 1984 .
[16] R. Kalish,et al. Formation of p on n photodiodes in Hg1−xCdxTe by ion implantation and cw CO2 laser annealing , 1985 .
[17] Y. Nemirovsky,et al. Combination of open‐tube vapor and liquid phase epitaxy of Hg1−xCdxTe , 1985 .
[18] Dietrich Meyerhofer,et al. Physics of III-V compounds , 1964 .
[19] A. M. Andrews,et al. Liquid‐phase epitaxial growth of stepwise‐graded InAs1−xSbx–InAs heterostructures , 1976 .
[20] P. R. Emtage. Auger recombination and junction resistance in lead‐tin telluride , 1976 .
[21] J. Dimmock,et al. InSb MOS Infrared Detector , 1967 .
[22] A. Rogalski,et al. PbS1-x,Sex, (O⩽x ⩽1) photovoltaic detectors: carrier lifetimes and resistance-area product , 1983 .
[23] Henry Levinstein,et al. Detection of Optical and Infrared Radiation , 1978 .
[24] Y. Taur,et al. Charge‐coupled devices in epitaxial HgCdTe/CdTe heterostructure , 1981 .
[25] L. O. Bubulac,et al. Backside-illuminated InAsSb/GaSb broadband detectors , 1980 .
[26] A. Steckl. INFRARED CHARGE COUPLED DEVICES , 1976 .
[27] J. Dimmock,et al. Band Structure and Laser Action in Pb x Sn 1-x Te , 1966 .
[28] P. Capper,et al. Factors affecting the electrical characteristics of cadmium mercury telluride crystals , 1980 .
[29] W. Tennant,et al. Isothermal vapor‐phase epitaxy of Hg1−xCdxTe on CdTe and Al2O3 substrates , 1985 .
[30] N. Byer,et al. Schottky barrier formation on (Pb,Sn)Te , 1979 .
[31] K. Herrmann,et al. Recombination analysis in 10 μm Pb1−xSnxTe , 1976 .
[32] C. C. Wang,et al. Backside‐illuminated HgCdTe/CdTe photodiodes , 1979 .
[33] H. Vydyanath,et al. Liquid Phase Epitaxial Growth of ( Hg1 − x Cd x ) Te from Tellurium‐Rich Solutions Using a Closed Tube Tipping Technique , 1981 .
[34] Lindley T. Specht,et al. High performance HgCdTe photoconductive devices grown by metalorganic chemical vapor deposition , 1986 .
[35] A. Million,et al. Characterization of CdxHg1-xTe p-type layers grown by MBE , 1982 .
[36] B. Jensen,et al. Dispersion of the refractive index of ternary compound Pb1−xSnxTe , 1984 .
[37] J. Piotrowski,et al. Uncooled photoconductive (Cd,Hg)Te detectors for the 8–14 μm region , 1979 .
[38] D. Lile. Surface photovoltage and internal photoemission at the anodized InSb surface , 1973 .
[39] Stuart A. Rice,et al. Photoconductivity of solids , 1978 .
[40] P. Capper,et al. A study of casting in the CdxHg1-xTe system , 1979 .
[41] A. M. Andrews,et al. Backside−illuminated Pb1−xSnxTe heterojunction photodiode , 1975 .
[42] J. G. Pasko,et al. Backside-illuminated InAs/1-x/Sb/x/-InAs narrow-band photodetectors , 1977 .
[43] Yael Nemirovsky,et al. The interface of plasma‐anodized Hg1−xCdxTe , 1982 .
[44] H. Vydyanath. Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys I . Defect Structure of Undoped and Copper Doped , 1981 .
[45] D. C. Northrop,et al. Indium contacts to lead telluride , 1980 .
[46] M. H. Kalisher. The behavior of doped Hg1−xCdxTe epitaxial layers grown from Hg-rich melts , 1984 .
[47] A. Rogalski. Influence of air on the electrical properties of Pb1-xSnxTe layers on a mica substrate , 1980 .
[48] R. Behrendt,et al. A study of planar Cd‐diffused Pb1−xSnxTe photodiodes , 1980 .
[49] A. Rogalski,et al. Band-to-band recombination in InAs1−xSbx , 1985 .
[50] W. Hoke,et al. Metal‐organic vapor deposition of CdTe and HgCdTe films , 1983 .
[51] C. C. Wang,et al. Liquid Phase Growth of HgCdTe Epitaxial Layers , 1980 .
[52] M. Takeshima. Auger recombination in InAs, GaSb, InP, and GaAs , 1972 .
[53] H. Holloway. Quantum efficiencies of thin‐film IV‐VI semiconductor photodiodes , 1979 .
[54] R. Bicknell. Electrical and metallurgical examination of Pb1−xSnxTe/PbTe heterojunctions , 1977 .
[55] J. D. Jensen,et al. Surface charge transport in PbSxSe1−x and Pb1−ySnySe epitaxial films , 1976 .
[56] W. Anderson,et al. Absorption constant of Pb1−xSnxTe and Hg1−xCdxTe alloys☆ , 1980 .
[57] O. Ziep. Estimation of second‐order Auger recombination in lead chalcogenides , 1983 .
[58] T. S. Moss,et al. Handbook on semiconductors , 1980 .
[59] Y. Nemirovsky,et al. Anodic sulfide films on Hg1−xCdxTe , 1984 .
[60] J. Reno,et al. II–VI semiconductor compounds: New superlattice systems for the future? , 1985 .
[61] P. Capper,et al. The effects of growth speed on the compositional variations in crystals of cadmium mercury telluride , 1979 .
[62] J. Roberts,et al. Acceptor doping of bridgman-grown CdxHg1−xTe , 1985 .
[63] A. Zozime,et al. Sputtered mercury cadmium telluride photodiode , 1976 .
[64] C. C. Wang,et al. Effect of Proton Bombardment on Pb0.76Sn0.24Te , 1972 .
[65] P. Capper. The behaviour of selected impurities in CdxHg1−xTe , 1982 .
[66] D. Day,et al. An integrating detector for serial scan thermal imaging , 1982 .
[67] J. F. Butler,et al. Metallic Inclusions and Cellular Substructure in Pb1 − x Sn x Te Single Crystals , 1969 .
[68] D. Joslin,et al. Metal-insulator-semiconductor studies of lead telluride∗ , 1977 .
[69] M. A. Kinch,et al. Geometrical enhancement of HgCdTe photoconductive detectors , 1977 .
[70] K. Herrmann,et al. Nonradiative and Radiative Recombination in Lead Chalcogenides , 1980 .
[71] R. Chapman,et al. The MIS physics of the native oxide Hg1-xCdxTe interface , 1982 .
[72] H. Holloway,et al. Peripheral photoresponse of a p–n junction , 1983 .
[73] M. Kinch,et al. Photoconductive HgCdTe detector performance with background variations , 1977 .
[74] Yu. I. Ravich,et al. Scattering of Current Carriers and Transport Phenomena in Lead Chalcogenides , 1971 .
[75] J. Bowers,et al. LPE growth of Hg0.60Cd0.40Te from Te‐rich solution , 1979 .
[76] K. M. V. Vliet,et al. Carrier density fluctuations in semiconductors and photoconductors with one kind of trapping centers , 1960 .
[77] W. Scott. Electron Mobility in Hg1−xCdxTe , 1972 .
[78] Junhao Chu,et al. Energy gap versus alloy composition and temperature in Hg1−xCdxTe , 1983 .
[79] S. Shin,et al. Open‐tube isothermal vapor phase epitaxy of Hg1−xCdxTe on CdTe , 1984 .
[80] P. Capper,et al. Quenching studies in bridgman-grown CdxHg1−xTe , 1983 .
[81] J. Walpole,et al. Capacitance‐Voltage Characteristics of Metal Barriers on p PbTe and p InAs: Effects of the Inversion Layer , 1971 .
[82] A. Beer,et al. Galvanomagnetic effects in semiconductors , 1963 .
[83] C. Wood,et al. Growth of Sb and InSb by molecular‐beam epitaxy , 1981 .
[84] L. Zanotti,et al. Segregation in Pb1−xSnx Te during solidification by the Bridgman technique , 1979 .
[85] A. Rogalski,et al. Effect of structure on the quantum efficiency and R0A product of lead-tin chalcogenide photodiodes , 1982 .
[86] S. P. Kowalczyk,et al. XPS investigation of the oxidation of Hg1-xCdxTe surfaces , 1981 .
[87] E. H. Rhoderick,et al. Metal–Semiconductor Contacts , 1979 .
[88] M. Schulz,et al. Metal-semiconductor barrier studies of PbTe , 1978 .
[89] M. Kawashima,et al. PbSnSeTe–PbSeTe Lattice-Matched Double-Heterostructure Lasers , 1982 .
[90] Yael Nemirovsky,et al. Infrared optical absorption of Hg1−xCdxTe , 1979 .
[91] Günter Nimtz,et al. Narrow-Gap Semiconductors , 1983 .
[92] M. Oron,et al. Minority‐carrier diffusion‐length measurement and lifetime in Pb0.8Sn0.2Te and indium‐doped PbTe liquid phase epitaxy layers , 1983 .
[93] A. W. Vere,et al. Growth of CdxHg1-xTe by a pressurised cast-recrystallise-anneal technique , 1982 .
[94] M. A. Kinch,et al. 0.1 eV HgCdTe photoconductive detector performance , 1977 .
[95] D. Bassett,et al. Liquid phase epitaxial growth of Pb1−ySnySe , 1974 .
[96] S. Ghandhi,et al. High quality Hg1−xCdxTe epitaxial layers by the organometallic process , 1984 .
[97] M. Nowak. The Possible Existence of the Interference Photomagnetoelectric Effect , 1982 .
[98] J. C. Woolley,et al. OPTICAL ENERGY-GAP VARIATION IN InAs–InSb ALLOYS , 1964 .
[99] Salah M. Bedair,et al. p-n junction formation in InSb and InAs(1-x)Sb(x) by metalorganic chemical vapor deposition , 1985 .
[100] K. J. Riley,et al. Background and temperature dependent current‐voltage characteristics of HgCdTe photodiodes , 1982 .
[101] J. Hornung,et al. PbTe and Pb0.8Sn0.2Te epitaxial films on cleaved BaF2 substrates prepared by a modified hot‐wall technique , 1976 .
[102] W. Wilson,et al. Sputtered thin films of Pb1−xSnxTe for potential infrared detector applications , 1979 .
[103] J. Schmit. Growth, properties and applications of HgCdTe , 1983 .
[104] D. E. Charlton,et al. The practical realisation and performance of sprite detectors , 1982 .
[105] J. Tissot,et al. 32×32 planar IR photovoltaic mosaic arrays on sputtered CdxHg1−xTe epilayers , 1984 .
[106] J. Woolley,et al. Electrical properties of InAsxSb1−x alloys , 1968 .
[107] L. R. Weisberg,et al. Semiconducting III – V Compounds , 1963 .
[108] V. Gopal. Energy gap-refractive index interrelation , 1982 .
[109] S. Hiscocks. The vapour growth of IV–VI compounds , 1972 .
[110] O. Ziep,et al. A New Approach to Auger Recombination. Application to Lead Chalcogenides , 1980 .
[111] D. K. Arch,et al. HgCdTe heterojunction contact photoconductor , 1984 .
[112] F. K. Hopkins,et al. Dark current analysis of InSb photodiodes , 1984 .
[113] R. Mozzi,et al. Zn‐Diffusion‐Induced Damage in InSb Diodes , 1970 .
[114] C. T. Elliott. Cadmium mercury telluride infrared detectors , 1985 .
[115] J. Cheung. Epitaxial growth of Hg0.7Cd0.3Te by laser‐assisted deposition , 1983 .
[116] F. Bailly,et al. Influence of the mercury vapor pressure on the isothermal growth of HgTe over CdTe , 1975 .
[117] O. Ziep,et al. Intrinsic recombination in dependence on doping concentration and excitation level application to lead chalcogenides , 1983 .
[118] M. Górska,et al. Vapour phase growth and properties of Pb1−xSnxTe single crystals , 1986 .
[119] J. Thompson,et al. Epitaxial growth of II–VI compounds on sapphire substrates , 1986 .
[120] H. Holloway,et al. Low‐capacitance PbTe photodiodes , 1977 .
[121] M. Pines,et al. Surface effects in n-type InSb photoconductors , 1979 .
[122] Akira Sugimura,et al. Band‐to‐band Auger effect in GaSb and InAs lasers , 1980 .
[123] Hans Zogg,et al. Mis capacitors on BaF2/PbSe layers and epitaxial Si/BaF2/PBSE structures for IR detection , 1985 .
[124] A. Rogalski,et al. Temperature dependence of the RoA product for lead chalcogenide photovoltaic detectors , 1981 .
[125] THERMAL LIMITATIONS IN PbSnTe DETECTORS , 1975 .
[126] M. Kinch,et al. 0.1 ev HgCdTe photodetectors , 1975 .
[127] M. Nowak. The photomagnetoelectric effect and photoconductivity for non‐normal incidence of radiation , 1983 .
[128] W. Anderson. Tunnel contribution to Hg1−xCdxTe and Pb1−xSnxTe p−n junction diode characteristics , 1980 .
[129] J. Mullin,et al. A study of transport and pyrolysis in the growth of CdxHg1−xTe by MOVPE , 1983 .
[130] J. Schmit,et al. Energy gap versus alloy composition and temperature in Hg1−xCdxTe , 1982 .
[131] T. Oguchi. Antiferromagnetic ground state , 1963 .
[132] H. Holloway. Peripheral electron‐beam induced current response of a shallow p‐n junction , 1984 .
[133] W. Anderson,et al. Tunnel current limitations of narrow bandgap infrared charge coupled devices , 1977 .
[134] S. Senturia,et al. Optical dielectric constant of Pb1−xSnxTe in the narrow‐gap region , 1976 .
[135] P. Capper,et al. Comments on segregation during bridgman growth of CdxHg1-xTe , 1983 .
[136] J. Dubowski,et al. Electron scattering in CdxHg1−xTe , 1981 .
[137] G. B. Stringfellow,et al. Liquid Phase Epitaxial Growth of InAs1 − x Sb x , 1971 .
[138] D. L. Spears,et al. Anomalous noise behavior in wide‐bandwidth photodiodes in heterodyne and background‐limited operation , 1979 .
[139] H. Holloway,et al. IV‐VI semiconductor lateral‐collection photodiodes , 1978 .
[140] W. Zawadzki. Narrow Gap Semiconductors Physics and Applications , 1980 .
[141] P. Zimmermann,et al. Fabrication and electrical properties of epitaxial PbTe metal‐insulator‐semiconductor structures , 1979 .
[142] M. A. Kinch,et al. Electronic properties of HgCdTe , 1982 .
[143] N. G. Chew,et al. The potential for abrupt interfaces in CdxHg1−xTe using thermal and photo-MOVPE , 1986 .
[144] A. Bradford,et al. Preparation of vapor grown lead-tin telluride for 8–14 micrometer photodiodes , 1975 .
[145] A. Vanderwyck,et al. High‐performance backside‐illuminated Hg0.78Cd0.22Te/CdTe (λCO=10 μm) planar diodes , 1980 .
[146] C. C. Wang,et al. Proton bombardment and isochronal annealing of p‐type Pb0.76Sn0.24Te , 1974 .
[147] K. Sugii,et al. Vapor-melt-solid mechanism of Pb1−xSnxTe single crystal growth , 1983 .
[148] D. Polla,et al. Hg vacancy related lifetime in Hg0.68Cd0.32Te by optical modulation spectroscopy , 1983 .
[149] L. Bubulac. The role of epitaxy and substrate on junction formation in ion-implanted HgCdTe , 1985 .
[150] G. E. Smith,et al. Charge coupled semiconductor devices , 1970, Bell Syst. Tech. J..
[151] D. R. Daniel,et al. Sublimation growth of PbSe crystals with controlled carrier concentration , 1976 .
[152] E. J. Pearce,et al. Growth of CdxHg1−xTe: Comparison of some properties with the predictions of two melt growth models , 1983 .
[153] G. E. Smith,et al. Charge Transfer Devices , 1971 .
[154] L. Stil’bans,et al. Semiconducting Lead Chalcogenides , 1970 .
[155] J. Schmit,et al. Calculation of intrinsic carrier concentration in Hg1−xCdxTe , 1983 .
[156] C. C. Wang,et al. High-performance, high-density, planar PbSnTe detector arrays , 1977 .
[157] K. Lischka,et al. Auger recombination in PbTe , 1977 .
[158] H. Holloway,et al. Photodiodes fabricated in epitaxial PbTe by Sb + ion implantation , 1973 .
[159] K. Sugii,et al. Bridgman growth of subgrain boundary free Pb1−xSnxTe single crystals , 1985 .
[160] K. M. V. Vliet,et al. Ambipolar transport of carrier density fluctuations in germanium , 1958 .
[161] J. G. Pasko,et al. 1.22‐μm HgCdTe/CdTe avalanche photodiodes , 1982 .
[162] G. Bauer,et al. Impurity and vacancy states in PbTe , 1976 .
[163] S. M. Ryvkin. Photoelectric effects in semiconductors , 1964 .
[164] A. G. Mironov,et al. On the interband absorption in lead chalcogenides , 1978 .
[165] R. M. Biefeld. The preparation of InAs1−xSbx alloys and strained-layer superlattices by MOCVD , 1986 .
[166] D. Polla,et al. Schottky barrier photodiodes in Hg1-xCdxTe , 1980, 1978 International Electron Devices Meeting.
[167] H. Holloway,et al. Diffusion‐limited saturation current of a finite p‐n junction , 1984 .
[168] Hans Zogg,et al. Preparation and properties of epitaxial PbSe/BaF2/PbSe structures , 1985 .
[169] M. Nowak,et al. Some comments on the photomagnetoelectric effect , 1979 .
[170] M. Manfra,et al. Hydroplane polishing of semiconductor crystals , 1981 .
[171] D. Smith. Theory of generation‐recombination noise and responsitivity in overlap structure photoconductors , 1983 .
[172] J. B. Mullin,et al. The growth by MOVPE and characterisation of CdxHg1−xTe , 1981 .
[173] C. Vérié,et al. Epitaxial growth of InAs1−xSbx alloys by MOCVD , 1981 .
[174] V. L. Rideout. A review of the theory, technology and applications of metal-semiconductor rectifiers☆ , 1978 .
[175] R. Farrar,et al. Precipitation in CdxHg1−xTe , 1977 .
[176] H. Wieder,et al. Photo-electronic properties of InAs0.07Sb0.93 films , 1973 .
[177] L. L. Chang. Junction delineation by anodic oxidation in InSb (As, P) , 1967 .
[178] A. M. White,et al. The characteristics of minority-carrier exclusion in narrow direct gap semiconductors , 1985 .
[179] J. Woolley,et al. ELECTRON SCATTERING INASXSB1-X ALLOYS, , 1968 .
[180] Koichi Kanzaki,et al. Properties of InSb Photodiodes Fabricated by Liquid Phase Epitaxy , 1976 .
[181] J. B. Mullin,et al. The growth of CdxHg1−xTe using organometallics , 1982 .
[182] A. Willoughby,et al. Diffusion in CdxHg1-xTe and related materials , 1982 .
[183] Hg Cd Te mis structure: Modelling and application to charge-coupled device infrared imagery , 1978 .
[184] O. Ziep,et al. Auger recombination in PbSnTe‐like semiconductors , 1978 .
[185] J. Piotrowski,et al. Ultimate detectivity of (CdHg)Te infrared photoconductors , 1979 .
[186] J. Harris,et al. The Pb-Sn-Te phase diagram and its application to the liquid phase epitaxial growth of Pb1−xSnxTe , 1975 .
[187] F. Bailly,et al. Mercury pressure over HgTe and HgCdTe in a closed isothermal system , 1975 .
[188] Calculation of the phase diagram of the Pb-Sn-Te system in the (Pb+Sn)-rich region , 1981 .
[189] T. N. Casselman,et al. Calculation of the Auger lifetime in p‐type Hg1‐xCdxTe , 1981 .
[190] H. Shtrikman,et al. Experimentally determined solid-liquid the lines of Pb1−xSnxTe , 1978 .
[191] J. M. Lloyd,et al. Thermal Imaging Systems , 1975 .
[192] J. R. Burke,et al. Striations Due to Compositional Variations in Czochralski‐Grown ( Pb1 − x Sn x ) 1 − y Te y , 1973 .
[193] C. L. Jones,et al. Minority carrier lifetime in n‐type Bridgman grown Hg1−xCdxTe , 1983 .
[194] P. Hall. Radiometry and the Detection of Optical Radiation , 1984 .
[195] H. H. Wieder,et al. Minority carrier lifetime in InAs epilayers , 1974 .
[196] D. Charlton. Recent developments in cadmium mercury telluride infrared detectors , 1982 .
[197] J. Sadowski,et al. Heteroepitaxial homogeneous CdxHg1−xTe films , 1978 .
[198] M. Nowak. Thin-film photoelectromagnetic detectors for infrared radiation , 1983 .
[199] D. Gillies,et al. One-dimensional analysis of segregation in directionally solidified HgCdTe , 1982 .
[200] J. Piotrowski,et al. On the performance of non-cooled CdHgTe photoelectromagnetic detectors for 10.6 μm radiation , 1980 .
[201] Eleftherios M. Logothetis,et al. Infrared Detection by Schottky Barriers in Epitaxial PbTe , 1971 .
[202] K. Herrmann,et al. Recombination in Pb0.83Sn0.17Te at high levels of optical excitation , 1977 .
[203] Henry Kressel,et al. Carrier lifetimes in epitaxial InAs , 1974 .
[204] J. S. Blakemore. Semiconductor Statistics , 1962 .
[205] A. N. Lowan,et al. Tables of Planck’s Radiation and Photon Functions* , 1940 .
[206] A. Lockwood,et al. Two-color detector arrays by PbTe/Pb0.8Sn0.2Te liquid phase epitaxy , 1976 .
[207] J. G. Pasko,et al. High‐speed Pb1−xSnx Te photodiodes , 1972 .
[208] P. Becla,et al. A Modified Approach to Isothermal Growth of Ultrahigh Quality HgCdTe for Infrared Applications , 1981 .
[209] H. Polakowski,et al. “Dead temperature” for photoelectromagnetic detectors of infrared radiation , 1984 .
[210] R. A. Smith,et al. The Detection and Measurement of Infrared Radiation , 1958 .
[211] A. Zozime,et al. Growth of thin films of CdxHg1−xTe solid solutions by cathodic sputtering in a mercury vapour plasma , 1980 .
[212] A. G. Milnes,et al. Heterojunctions and Metal Semiconductor Junctions , 1972 .
[213] E. Finkman,et al. Recombination mechanisms in p-type HgCdTe: Freezeout and background flux effects , 1985 .
[214] J. Donnelly,et al. n‐p JUNCTION PHOTODETECTORS IN InSb FABRICATED BY PROTON BOMBARDMENT , 1970 .
[215] J. Cox,et al. Planar Pb0.8Sn0.2Te photodiode array development at the night vision laboratory , 1975 .
[216] D. V. Eddolls,et al. High detectivity PbxSn1−xTe photovoltaic diodes , 1973 .
[217] T. Ashley,et al. Non-equilibrium modes of operation for infrared detectors , 1986 .
[218] W. Anderson,et al. Impurity‐to‐band tunneling in Hg1−xCdxTea) , 1982 .
[219] E. Ribak,et al. Recombination of photocarriers in lead-tin telluride , 1981 .
[220] H. Holloway,et al. Theory of lateral‐collection photodiodes , 1978 .
[221] I. Kidron,et al. Contact and bulk effects in intrinsic photoconductive infrared detectors , 1981 .
[222] N. Byer,et al. Oxygen uptake on epitaxial PbTe(111) surfaces , 1978 .
[223] W. Maurer. Temperature dependence of the R0A product of PbTe Schottky diodes , 1983 .
[224] R. Chapman,et al. Detectivity limits for diffused junction PbSnTe detectors , 1975 .
[225] J. D. Jensen,et al. Multispectral PbSxSe1−x and PbySn1−ySe photovoltaic infrared detectors∗☆ , 1980 .
[226] M. Pessa,et al. Hg1−xCdxTe‐Hg1−yCdyTe (0≤x, y≤1) heterostructures: Properties, epitaxy, and applications , 1985 .
[227] H. Shtrikman,et al. Dislocation etch pits in LPE‐grown Pb1−xSnxTe (LTT) heterostructures , 1979 .
[228] D. Polla,et al. Experimental determination of minority‐carrier lifetime and recombination mechanisms in p‐type Hg1−xCdxTe , 1981 .
[229] B. Sharma,et al. Comparison of schottky barrier and diffused junction infrared detectors , 1979 .
[230] R. Chapman,et al. Hg0.7Cd0.3Te charge‐coupled device shift registers , 1978 .
[231] J. Piotrowski,et al. Photoelectromagnetic effect in CdxHg1−xTe graded-gap structures , 1984 .
[232] M. Pines,et al. Characteristics of n-type InSb , 1979 .
[233] J. Mullin,et al. The growth of high quality CdxHg1−xTe by MOVPE onto GaAs substrates , 1985 .
[234] S. Bedair,et al. Growth of InSb and InAs(1-x)Sb(x) by OM-CVD , 1984 .
[235] Charles Freed,et al. HgCdTe varactor photodiode detection of cw CO2 laser beats beyond 60 GHz , 1973 .
[236] T. Moss. Relations between the Refractive Index and Energy Gap of Semiconductors , 1985 .
[237] H. Preier,et al. Growth of PbS1-xSex single crystals by sublimation , 1974 .
[238] T. Ashley,et al. Optimization of spatial resolution in sprite detectors , 1984 .
[239] D. T. Cheung,et al. HgCdTe photodiodes formed by double-layer liquid phase epitaxial growth , 1980 .
[240] D. Rhiger,et al. Hg1−xCdxTe native oxide reduction by CVD SiO2 , 1982 .
[241] R. D. Hudson. Infrared System Engineering , 1969 .
[242] M. Oron,et al. Junction migration in PbTe‐PbSnTe heterostructures , 1981 .
[243] A. Lockwood,et al. Performance of PbSnTe diodes at moderately reduced backgrounds , 1975 .
[244] J. Steininger. High pressure reflux technique for growth of Hg1-xCdxTe crystals , 1977 .
[245] A. Million,et al. CdxHg1−xTe n‐type layers grown by molecular beam epitaxy , 1982 .
[246] J. Schmit,et al. Liquid phase epitaxy of Hg1−xCdxCdxTe☆ , 1982 .
[247] A. Nurmikko,et al. Enhanced interband recombination in Pb1−xSnxTe , 1975 .
[248] A. Rogalski. Detectivity limits for PbTe photovoltaic detectors , 1980 .
[249] D. Lile,et al. The thin film MIS surface photodiode , 1972 .
[250] O. Ziep,et al. Calculation of the interband absorption in lead chalcogenides using a multiband model , 1979 .
[251] M. Bettini,et al. Oxidation in air and thermal desorption on PbTe, SnTe and Pb0.8Sn0.2Te Surfaces , 1979 .
[252] A. Calawa,et al. LASER EMISSION FROM METAL-SEMICONDUCTOR BARRIERS ON PbTe AND Pb(0.8)Sn(0.2)Te, , 1970 .
[253] H. Vydyanath. Lattice Defects in Semiconducting Hg1 − x Cd x Te Alloys II . Defect Structure of Indium‐Doped , 1981 .
[254] Hans Zogg,et al. Growth of high quality epitaxial PbSe onto Si using a (Ca,Ba)F2 buffer layer , 1985 .
[255] S. Shin,et al. 1.33‐μm HgCdTe/CdTe photodiodes , 1980 .
[256] M. Pines,et al. Recombination processes in intrinsic semiconductors using impact ionization capture cross sections in indium antimonide and mercury cadmium telluride , 1980 .
[257] H. Holloway,et al. Thin‐film (Pb,Sn)Se photodiodes for 8–12‐μm operation , 1976 .
[258] G. Pratt,et al. New Model for Vacancy States in PbTe , 1969 .
[259] P. Hatto,et al. Liquidus measurements in the Pb-Sn-Te system , 1979 .
[260] O. Tufte,et al. Growth and Properties of Hg1−xCdxTe Epitaxial Layers , 1969 .
[261] K. J. Orford,et al. The charge ratio of muons in extensive air showers , 1968 .
[262] A. M. Andrews,et al. ESCA surface studies of Pb1−xSnxTe devices , 1976 .
[263] H. Preier. Comparison of the junction resistance of (PbSn)Te and (PbSn)Se infrared detector diodes , 1978 .
[264] C. C. Wang,et al. Long‐wavelength PbSnTe/PbTe inverted heterostructure mosaics , 1979 .
[265] F. J. Bryant,et al. Hot-wall epitaxial growth of Pb1−xSnxTe hetero-layers for infrared diode laser devices , 1982 .
[266] P. Becla,et al. Mercury Pressure‐Induced LPE Growth of HgCdTe , 1983 .
[267] G. Lefeuvre,et al. Growth of high quality epitaxial CdxHg1-xTe films by sputter deposition , 1982 .