Impact of STI Effect on Flicker Noise in 0.13-$\mu \hbox{m}$ RF nMOSFETs
暂无分享,去创建一个
Ying-Zong Juang | Chih-Yuan Chan | Yu-Syuan Lin | S. Hsu | Y. Juang | Yu-Syuan Lin | Yen-Chun Huang | S.S.H. Hsu | Yen-Chun Huang | Chih-Yuan Chan
[1] C. H. Lee,et al. Impact of STI mechanical stress in highly scaled MOSFETs , 2003, 2003 International Symposium on VLSI Technology, Systems and Applications. Proceedings of Technical Papers. (IEEE Cat. No.03TH8672).
[2] R. Thewes,et al. Modeling of statistical low-frequency noise of deep-submicrometer MOSFETs , 2004, IEEE Transactions on Electron Devices.
[3] Hyuck In Kwon,et al. The analysis of dark signals in the CMOS APS imagers from the characterization of test structures , 2004, IEEE Transactions on Electron Devices.
[4] C. Hu,et al. A unified model for the flicker noise in metal-oxide-semiconductor field-effect transistors , 1990 .
[5] K. Yoshida,et al. Control of trench sidewall stress in bias ECR-CVD oxide-filled STI for enhanced DRAM data retention time , 1998, International Electron Devices Meeting 1998. Technical Digest (Cat. No.98CH36217).
[6] Jun-De Jin,et al. STI Effect on Flicker Noise in 0.13-μm RF NMOS , 2006, 2006 European Solid-State Device Research Conference.
[7] Modeling the variation of the low-frequency noise in polysilicon emitter bipolar junction transistors , 2001, IEEE Electron Device Letters.
[8] S. Maeda,et al. Impact of mechanical stress engineering on flicker noise characteristics , 2004, Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004..
[9] K. Matsuzawa,et al. The impact of oxynitride process, deuterium annealing and STI stress to1/f noise of 0.11 /spl mu/m CMOS , 2003, 2003 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.03CH37407).
[10] R.W. Brodersen,et al. Millimeter-wave CMOS design , 2005, IEEE Journal of Solid-State Circuits.
[11] M. Jamal Deen,et al. Low-frequency noise in SiGeC-based pMOSFETs , 2004, SPIE International Symposium on Fluctuations and Noise.
[12] Yanfeng Jiang,et al. Electrical analysis of mechanical stress induced by shallow trench isolation , 2009, 2009 International Conference on Electronic Packaging Technology & High Density Packaging.
[13] Gerard Ghibaudo,et al. Improved Analysis of Low Frequency Noise in Field‐Effect MOS Transistors , 1991 .
[14] Gérard Ghibaudo,et al. Electrical noise and RTS fluctuations in advanced CMOS devices , 2002, Microelectron. Reliab..
[15] Hong Shick Min,et al. An anomalous device degradation of SOI narrow width devices caused by STI edge influence , 2002 .
[16] D. Schroder. Semiconductor Material and Device Characterization , 1990 .
[17] Ognian Marinov,et al. A new model for the low-frequency noise and the noise level variation in polysilicon emitter BJTs , 2002 .
[18] Eddy Simoen,et al. Explaining the amplitude of RTS noise in submicrometer MOSFETs , 1992 .
[19] Y. Sonobe,et al. Impact of reducing STI-induced stress on layout dependence of MOSFET characteristics , 2004, IEEE Transactions on Electron Devices.
[20] A. Hoffmann,et al. Overview of the impact of downscaling technology on 1/f noise in p-MOSFETs to 90 nm , 2004 .
[21] G. Reimbold,et al. Electrical analysis of mechanical stress induced by shallow trench isolation [MOSFETs] , 2003, ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003..
[22] Thomas Skotnicki,et al. Low frequency noise characterization of 0.18μm Si CMOS transistors , 1997 .
[23] D. Pavlidis,et al. A comparison of low-frequency noise characteristics and noise sources in NPN and PNP InP-based heterojunction bipolar transistors , 2003 .
[24] Pietro Andreani,et al. Tail current noise suppression in RF CMOS VCOs , 2002, IEEE J. Solid State Circuits.