An efficient modelling of amorphous silicon and polycrystalline silicon thin film transistor for AMOLED display using MATLAB

A compact model in MATLAB environment of amorphous silicon and polycrystalline silicon based thin film transistor is essential to all Active Matrix Organic LED (AMOLED) designers to assessing and envisaging the performance of AMOLED's. This model explains the three regions of thin film transistor operation, i.e. leakage region, sub threshold region and above threshold region. The proposed model shows good settlement with experimental data reported elsewhere. The polycrystalline silicon thin film transistor shows better electrical properties, such as, high relative ON/OFF ratio, high mobility, and low power consumption than amorphous silicon thin film transistor.

[1]  T. Serikawa,et al.  Low-temperature fabrication of high-mobility poly-Si TFTs for large-area LCDs , 1989 .

[2]  J. Yi,et al.  Boosting the mobility and bias stability of oxide-based thin-film transistors with ultra-thin nanocrystalline InSnO:Zr layer , 2015 .

[3]  P. J. Tobin,et al.  Temperature dependence of the anomalous leakage current in polysilicon-on-insulator MOSFET's , 1994 .

[4]  Peyman Servati,et al.  Device Physics, Compact Modeling, and Circuit Applications of a-Si:H TFTs , 2004 .

[5]  M. Matsumura,et al.  Short-channel amorphous-silicon thin-film transistors , 1996 .

[6]  Peyman Servati,et al.  Modeling of the reverse characteristics of a-Si:H TFTs , 2002 .

[7]  Lei Zhu,et al.  Modeling of a-Si : H TFT I-V Characteristics in the Forward Subthreshold Operation , 2005 .

[8]  A. Nathan,et al.  Thin film transistor integration on glass and plastic substrates in amorphous silicon technology , 2003 .

[9]  J. Yi,et al.  Improvement of Mobility in Oxide-Based Thin Film Transistors: A Brief Review , 2015 .

[10]  H. Kong,et al.  TWO-DIMENSIONAL SIMULATION STUDY OF FIELD-EFFECT OPERATION IN UNDOPED POLY-SI THIN-FILM TRANSISTORS , 1995 .

[11]  L. Colalongo,et al.  Numerical analysis of poly-TFTs under off conditions , 1997 .

[12]  Mukul Agrawal,et al.  Device Physics , 2002 .

[13]  Peyman Servati,et al.  A physically-based SPICE model for the leakage current in a-Si:H TFTs accounting for its dependencies on process, geometrical, and bias conditions , 2000 .

[14]  Yue Kuo,et al.  Thin Film Transistor Technology — Past , Present , and Future , 2013 .

[15]  Y. Kuo.  Thin Film Transistor Technology—Past, Present, and Future , 2013 .