论文信息 - 1.4 ps rise‐time high‐voltage photoconductive switching

1.4 ps rise‐time high‐voltage photoconductive switching

We report on the generation of 825 V electrical pulses with 1.4 ps rise time and 4.0 ps duration using a pulse‐biased low‐temperature‐grown GaAs photoconductive switch triggered by an amplified femtosecond dye laser. Dependence of the pulse shape on both electric field and optical energy is observed and discussed.

[1] D. Stearns. Electro-optic sampling of ultrashort high voltage pulses , 1989 .

[2] Gerard Mourou,et al. Kilohertz synchronous amplification of 85-femtosecond optical pulses , 1985 .

[3] H. G. Jerrard,et al. Picosecond optoelectronic devices: Edited by Chi H. Lee Academic Press, 1984, pp xi + 406, £42.00, $60.00 , 1986 .

[4] Gerard Mourou,et al. Picosecond Electronics and Optoelectronics , 1989 .

[5] G. Mourou,et al. Generation of 85-fsec pulses by synchronous pumping of a colliding-pulse mode-locked dye laser , 1985 .

[6] D. Ferry,et al. Gallium Arsenide Technology , 1990 .

[7] Naomi J. Halas,et al. Capacitance free generation and detection of subpicosecond electrical pulses on coplanar transmission lines , 1988 .

[8] Michael C. Downer,et al. Picosecond Electronics and Optoelectronics II Edited by F. J. Leonberger, C.H. Lee, F. Capasso, and H. Morkoc, (Springer-Verlag, 1987) , 1988 .

[9] Gerard Mourou,et al. High-voltage picosecond photoconductor switch based on low-temperature-grown GaAs , 1990 .

[10] G. Mourou,et al. Subpicosecond electrooptic sampling: Principles and applications , 1986 .