Millimeter-Wave FET Nonlinear Modelling Based on the Dynamic-Bias Measurement Technique

In the paper, the nonlinear model of a microwave transistor is extracted from large-signal measurements acquired under “dynamic-bias” operation. Specifically, the transistor is driven by low-frequency large signals while a high-frequency tickle is applied on top of them. The low-frequency large signals, along with the dc bias voltages, set the large-signal operating point which represents a dynamic-bias condition for the device under test. Thanks to this technique, one can get at once and separately the nonlinear currents and charges of the transistor as a result of a very few nonlinear measurements. Additionally, the proposed technique allows one to accurately reconstruct the time-domain waveforms at the device-under-test terminals while the frequency of the tickle can be set as high as the bandwidth of today's vector calibrated nonlinear measurement systems (i.e., 67 GHz). The approach, which is general and independent of device technology, is applied on a 0.15- μm GaAs pHEMT specifically designed for resistive cold-FET mixer applications.

[1]  D. Schreurs,et al.  Waveform Measurements on a HEMT Resistive Mixer , 1996, 47th ARFTG Conference Digest.

[2]  Jianjun Xu,et al.  Measurement-Based Non-Quasi-Static Large-Signal FET Model Using Artificial Neural Networks , 2006, 2006 IEEE MTT-S International Microwave Symposium Digest.

[3]  G Pailloncy,et al.  Large-Signal Network Analysis Including the Baseband , 2011, IEEE Microwave Magazine.

[4]  G. Avolio,et al.  Experiment design for quick statistical FET large signal model extraction , 2013, 81st ARFTG Microwave Measurement Conference.

[5]  A. Caddemi,et al.  Non-linear look-up table modeling of GaAs HEMTs for mixer application , 2012, 2012 Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits.

[6]  H. Zirath,et al.  An empirical-table based FET model , 1999, 1999 IEEE MTT-S International Microwave Symposium Digest (Cat. No.99CH36282).

[7]  G. Dambrine,et al.  A new method for determining the FET small-signal equivalent circuit , 1988 .

[8]  M. Pagani,et al.  Accurate Nonlinear Electron Device Modelling for Cold FET Mixer Design , 2008, 2008 European Microwave Integrated Circuit Conference.

[9]  D.E. Root,et al.  Polyharmonic distortion modeling , 2006, IEEE Microwave Magazine.

[10]  Valeria Vadala,et al.  Behavioral Modeling of GaN FETs: A Load-Line Approach , 2014, IEEE Transactions on Microwave Theory and Techniques.

[11]  N.B. Carvalho,et al.  Nonlinear device model of microwave power GaN HEMTs for high power-amplifier design , 2004, IEEE Transactions on Microwave Theory and Techniques.

[12]  Yves Rolain,et al.  Why are nonlinear microwave systems measurements so involved? , 2004, IEEE Transactions on Instrumentation and Measurement.

[13]  Stephen A. Maas,et al.  Nonlinear Microwave and RF Circuits , 2003 .

[14]  Christian Fager,et al.  Prediction of IMD in LDMOS transistor amplifiers using a new large-signal model , 2002 .

[15]  Valeria Vadala,et al.  Characterization of GaN HEMT Low-Frequency Dispersion Through a Multiharmonic Measurement System , 2010, IEEE Transactions on Microwave Theory and Techniques.

[16]  J. Benedikt,et al.  Nonlinear Data Utilization: From Direct Data Lookup to Behavioral Modeling , 2009, IEEE Transactions on Microwave Theory and Techniques.

[17]  T. Kacprzak,et al.  Computer Calculation of Large-Signal GaAs FET Amplifier Characteristics , 1985 .

[18]  W. Curtice.  A MESFET Model for Use in the Design of GaAs Integrated Circuits , 1980 .

[19]  A. Caddemi,et al.  Nonlinear model for 40-GHz cold-FET operation , 2014, 2014 International Workshop on Integrated Nonlinear Microwave and Millimetre-wave Circuits (INMMiC).

[20]  M. Fernandez-Barciela,et al.  Direct extraction of nonlinear FET I-V functions from time domain large signal measurements , 1998 .

[21]  M. Van Rossum,et al.  Direct Extraction of the Non-Linear Model for Two-Port Devices from Vectorial Non-Linear Network Analyzer Measurements , 1997, 1997 27th European Microwave Conference.

[22]  Thomas J. Brazil,et al.  A scalable general-purpose model for microwave FETs including DC/AC dispersion effects , 1997 .

[23]  R.A. Pucel,et al.  GaAs FET device and circuit simulation in SPICE , 1987, IEEE Transactions on Electron Devices.

[24]  Jianjun Xu,et al.  Large-signal FET model with multiple time scale dynamics from nonlinear vector network analyzer data , 2010, 2010 IEEE MTT-S International Microwave Symposium.

[25]  M. Fernandez-Barciela,et al.  Direct extraction of nonlinear FET Q-V functions from time domain large signal measurements , 2000 .

[26]  A. Caddemi,et al.  Determination and Validation of New Nonlinear FinFET Model Based on Lookup Tables , 2007, IEEE Microwave and Wireless Components Letters.

[27]  Jose C. Pedro,et al.  Intermodulation Distortion in Microwave and Wireless Circuits , 2003 .

[28]  Dominique Schreurs,et al.  Large-Signal Time-Domain Waveform-Based Transistor Modeling , 2013 .

[29]  Thomas J. Brazil,et al.  Padé-Approximation-Based Behavioral Modeling , 2013, IEEE Transactions on Microwave Theory and Techniques.

[30]  Jan Verspecht,et al.  Calibration of a Measurement System for High Frequency Nonlinear Devices , 1999 .