Simulation of the external quantum efficiency for bilayer organic light-emitting diodes

Changes in the external quantum efficiency of bilayer organic light emitting devices with layer length have been measured for devices of configuration ITO\TPD\Alq\Mg:Ag with the Alq length varying between 25-200nm. It has been independently concluded for similar devices that the thickness of the Alq layer can be optimised with regard to the external quantum efficiency. However, our simulations of the internal quantum efficiency of this structure with an electrical transport model predict that the internal quantum efficiency is invariant with respect to the Alq layer thickness. We deduce that optical microcavity effects cause the variation in external quantum efficiency. These microcavity effects alter the external efficiency through optical interference and through altering the singlet exciton density profile. A combined electrical-optical model based on our electrical transport model and an optical model has been used to calculate the external efficiency for these devices. We find a clear variation in efficiency with layer thickness, matching the experimentally observed trends.

[1]  Stephen R. Forrest,et al.  Electroluminescence from trap‐limited current transport in vacuum deposited organic light emitting devices , 1994 .

[2]  George G. Malliaras,et al.  Temperature- and field-dependent electron and hole mobilities in polymer light-emitting diodes , 1999 .

[3]  P. Blom,et al.  Electric-field and temperature dependence of the hole mobility in poly(p-phenylene vinylene) , 1997 .

[4]  S. Shaheen Device physics of organic light-emitting diodes , 1999 .

[5]  Alison B. Walker,et al.  Simulation of organic light-emitting diodes , 1999, Photonics West.

[6]  W. Lukosz,et al.  Theory of optical-environment-dependent spontaneous-emission rates for emitters in thin layers , 1980 .

[7]  R. N. Marks,et al.  Light-emitting diodes based on conjugated polymers , 1990, Nature.

[8]  Dunlap,et al.  Charge-Dipole Model for the Universal Field Dependence of Mobilities in Molecularly Doped Polymers. , 1996, Physical review letters.

[9]  J. Staudigel,et al.  A quantitative numerical model of multilayer vapor-deposited organic light emitting diodes , 1999 .

[10]  Kristiaan Neyts,et al.  Simulation of light emission from thin-film microcavities , 1998 .

[11]  S. Forrest,et al.  Electrophosphorescence in organic light emitting diodes , 1999 .

[12]  Dynamics of photoexcited states and charge carriers in organic thin films: Alq3 , 1996 .

[13]  Paul Davids,et al.  Device model for single carrier organic diodes , 1997 .

[14]  George G. Malliaras,et al.  Charge injection and recombination at the metal–organic interface , 1999 .

[15]  W. Lukosz,et al.  Light emission by magnetic and electric dipoles close to a plane interface. I. Total radiated power , 1977 .

[16]  R. Fowler,et al.  Electron Emission in Intense Electric Fields , 1928 .

[17]  Richard H. Friend,et al.  Interference effects in anisotropic optoelectronic devices , 2000 .

[18]  C. Tang,et al.  Organic Electroluminescent Diodes , 1987 .

[19]  Alison B. Walker,et al.  The internal electric field distribution in bilayer organic light emitting diodes , 2002 .

[20]  W. Lukosz,et al.  Light emission by multipole sources in thin layers. I. Radiation patterns of electric and magnetic dipoles , 1981 .

[21]  W. Lukosz,et al.  Changes in fluorescence lifetimes induced by variation of of the radiating molecules' optical environment , 1979 .

[22]  J. Choi,et al.  Emission shift by recombination effect in a three-layered oeld , 2000 .

[23]  Wolfgang Brütting,et al.  Device physics of organic light-emitting diodes based on molecular materials , 2001 .

[24]  M. S. Tyagi,et al.  Introduction to Semiconductor Materials and Devices , 1991 .

[25]  Stephen R. Forrest,et al.  EXCITONIC SINGLET-TRIPLET RATIO IN A SEMICONDUCTING ORGANIC THIN FILM , 1999 .

[26]  Paul Davids,et al.  Device model investigation of bilayer organic light emitting diodes , 2000 .