Zero relaxation time limits to isothermal hydrodynamic model for semiconductor

Abstract In this paper, we remove the bounded total variation condition on the initial data and the restriction of the concentration of a fixed background charge being a constant in the paper “Relaxation of the Isothermal Euler–Poisson System to the Drift-Diffusion Equations,” (Quart. Appl. Math., 58 (2000), 511–521), and obtain the zero relaxation time limits to isothermal hydrodynamic model for semiconductor by using the varying viscosity method.

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